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march 2007 rev 1 1/110 1 m58lt128hst M58LT128HSB 128-mbit (8 mb 16, multiple ba nk, multilevel interface, burst) 1.8 v supply, secure flash memories features supply voltage ?v dd = 1.7 v to 2.0 v for program, erase and read ?v ddq = 2.7 v to 3.6 v for i/o buffers ?v pp = 9 v for fast program synchronous / asynchronous read ? synchronous burst read mode: 52 mhz ? asynchronous page read mode ? random access: 85 ns synchronous burst read suspend programming time ? 2.5 s typical word program time using buffer enhanced factory program command memory organization ? multiple bank memory array: 8-mbit banks ? parameter blocks (top or bottom location) dual operations ? program/erase in one bank while read in others ? no delay between read and write operations block protection ? all blocks protected at power-up ? any combination of blocks can be protected with zero latency ? absolute write protection with v pp = v ss security ? software security features ? 64-bit unique device number ? 2112-bit user programmable otp cells common flash interface (cfi) 100 000 program/erase cycles per block electronic signature ? manufacturer code: 20h ? top device codes: m58lt128hst: 88d6h ? bottom device codes M58LT128HSB: 88d7h tbga64 package ? ecopack? compliant tbga64 (za) 10 13 mm bga www.st.com
contents m58lt128hst, M58LT128HSB 2/110 contents 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.1 address inputs (a0-a22) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2 data inputs/outputs (dq0-dq15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.3 chip enable (e ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.4 output enable (g ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.5 write enable (w ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.6 reset (rp ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.7 latch enable (l ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.8 clock (k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.9 wait (wait) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.10 v dd supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.11 v ddq supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.12 v pp program supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.13 v ss ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.14 v ssq ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3 bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1 bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.2 bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.3 address latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.4 output disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.5 standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.6 reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4 command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.1 read array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.2 read status register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.3 read electronic signature command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4 read cfi query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.5 clear status register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
m58lt128hst, M58LT128HSB contents 3/110 4.6 block erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.7 blank check command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.8 program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.9 buffer program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.10 buffer enhanced factory program command . . . . . . . . . . . . . . . . . . . . . 24 4.10.1 setup phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.10.2 program and verify phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.10.3 exit phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.11 program/erase suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.12 program/erase resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.13 protection register program command . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.14 set configuration register command . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.15 block protect command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.16 block unprotect command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 5 status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 5.1 program/erase controller status bit (sr7) . . . . . . . . . . . . . . . . . . . . . . . . 33 5.2 erase suspend status bit (sr6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 5.3 erase/blank check status bit (sr5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.4 program status bit (sr4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.5 v pp status bit (sr3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.6 program suspend status bit (sr2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.7 block protection status bit (sr1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.8 bank write/multiple word program status bit (sr0) . . . . . . . . . . . . . . . . 35 6 configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.1 read select bit (cr15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.2 x-latency bits (cr13-cr11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.3 wait polarity bit (cr10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.4 data output configuration bit (cr9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.5 wait configuration bit (cr8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.6 burst type bit (cr7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.7 valid clock edge bit (cr6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 6.8 wrap burst bit (cr3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
contents m58lt128hst, M58LT128HSB 4/110 6.9 burst length bits (cr2-cr0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 7 read modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 7.1 asynchronous read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 7.2 synchronous burst read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 7.2.1 synchronous burst read suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 7.3 single synchronous read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 8 dual operations and multiple bank architecture . . . . . . . . . . . . . . . . . 47 9 block protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.1 reading a block?s protection status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.2 protected state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.3 unprotected state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.4 protection operations during erase suspend . . . . . . . . . . . . . . . . . . . . . . 50 10 program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 51 11 maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 12 dc and ac parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 13 package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 14 part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 appendix a block address tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 appendix b common flash interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 appendix c flowcharts and pseudo codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 appendix d command interface state ta bles. . . . . . . . . . . . . . . . . . . . . . . . . . . 100 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
m58lt128hst, M58LT128HSB list of tables 5/110 list of tables table 1. signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 2. bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 3. bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 4. command codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 5. standard commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 table 6. factory commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table 7. electronic signature codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table 8. protection register locks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 table 9. status register bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 table 10. x-latency settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 table 11. configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 table 12. burst type definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 table 13. dual operations allowed in other banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 table 14. dual operations allowed in same bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 table 15. dual operation limitations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 table 16. program/erase times and endurance cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 table 17. absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 table 18. operating and ac measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 table 19. capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 table 20. dc characteristics - currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 table 21. dc characteristics - voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 table 22. asynchronous read ac characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 table 23. synchronous read ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 table 24. write ac characteristics, write enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 table 25. write ac characteristics, chip enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 table 26. reset and power-up ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 table 27. tbga64 10 13 mm - 8 8 active ball array, 1 mm pitch, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 table 28. ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 table 29. top boot block addresses, m58lt128hst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 table 30. bottom boot block addresses, M58LT128HSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 table 31. query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 table 32. cfi query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 table 33. cfi query system interface information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 table 34. device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 table 35. primary algorithm-specific extended query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 table 36. protection register information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 table 37. burst read information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 table 38. bank and erase block region information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 table 39. bank and erase block region 1 information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 table 40. bank and erase block region 2 information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 table 41. command interface states - modify table, next state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 table 42. command interface states - modify table, next output state . . . . . . . . . . . . . . . . . . . . . . 103 table 43. command interface states - lock table, next state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 table 44. command interface states - lock table, next output state . . . . . . . . . . . . . . . . . . . . . . . . 107 table 45. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
list of figures m58lt128hst, M58LT128HSB 6/110 list of figures figure 1. logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 2. tbga64 package connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 3. memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 4. protection register memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 figure 5. x-latency and data output configuration example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 figure 6. wait configuration example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 figure 7. ac measurement i/o waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 figure 8. ac measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 figure 9. asynchronous random access read ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 figure 10. asynchronous page read ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 figure 11. synchronous burst read ac waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 figure 12. single synchronous read ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 figure 13. synchronous burst read suspend ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 figure 14. clock input ac waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 figure 15. write ac waveforms, write enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 figure 16. write ac waveforms, chip enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 figure 17. reset and power-up ac waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 figure 18. tbga64 10 13 mm - 8 8 active ball array, 1 mm pitch, bottom view package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 figure 19. program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 1 figure 20. blank check flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 figure 21. buffer program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 figure 22. program suspend & resume flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . 94 figure 23. block erase flowchart and pseudo code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 figure 24. erase suspend & resume flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 figure 25. protect/unprotect operation flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . 97 figure 26. protection register program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . 98 figure 27. buffer enhanced factory program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . 99
m58lt128hst, M58LT128HSB description 7/110 1 description the m58lt128hst/b are 128 mbit (8 mbit x16) non-volatile secure flash memories. they may be erased electrically at block level and programmed in-system on a word-by-word basis using a 1.7 v to 2.0 v v dd supply for the circuitry and a 2.7 v to 3.6 v v ddq supply for the input/output pins. an optional 9 v v pp power supply is provided to speed up factory programming. the devices feature an asymmetrical block architecture. the m58lt128hst/b have an array of 131 blocks, and are divided into 8 mbit banks. there are 15 banks each containing 8 main blocks of 64 kwords, and one parameter bank containing 4 parameter blocks of 16 kwords and 7 main blocks of 64 kwords. the multiple bank architecture allows dual operations, while programming or erasing in one bank, read operations are possible in other ba nks. only one bank at a time is allowed to be in program or erase mode. it is possible to perform burst reads that cross bank boundaries. the bank architecture is summarized in ta b l e 2 , and the memory map is shown in figure 3 . the parameter blocks are located at the top of the memory address space for the m58lt128hst, and at the bottom for the M58LT128HSB. each block can be erased separately. erase can be suspended, in order to perform a program or read operation in any other block, and then resumed. program can be suspended to read data at any memory location except for the one being programmed, and then resumed. each block can be programmed and erased over 100,000 cycles using the supply voltage v dd . there is a buffer enhanced factory programming command available to speed up programming. program and erase commands are written to the command interface of the memory. an internal program/erase controller takes care of the timings necessary for program and erase operations. the end of a program or erase operation can be detected and any error conditions identified in the status register. the command set required to control the memory is consistent with jedec standards. the device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. in synchronous burst read mode, data is output on each clock cycle at frequencies of up to 52 mhz. the synchronous burst read operation can be suspended and resumed. the device features an automatic standby mode. when the bus is inactive during asynchronous read operations, the device autom atically switches to the automatic standby mode. in this condition the power consumption is reduced to the standby value and the outputs are still driven. the m58lt128hst/b features an instant, individual block protection scheme that allows any block to be protected or unprotected with no latency, enabling instant code and data protection. they can be protected individually preventing any accidental programming or erasure. there is an additional hardware protection against program and erase. when v pp v pplk all blocks are protected against program or erase. all blocks are protected at power- up. the device includes 17 protection registers and 2 protection register locks, one for the first protection register and the other for the 16 one-time-programmable (otp) protection registers of 128 bits each. the first protection register is divided into two segments: a 64 bit segment containing a unique device number written by st, and a 64 bit segment one-
description m58lt128hst, M58LT128HSB 8/110 time-programmable (otp) by the user. the user programmable segment can be permanently protected. figure 4 , shows the protection register memory map. the m58lt128hst/b also has a full set of software security features that are not described in this datasheet, but are documented in a dedicated application note. for further information please contact stmicroelectronics. the m58lt128hst/b are offered in a tbga64, 10 13 mm, 1 mm pitch package. they are supplied with all the bits erased (set to ?1?).
m58lt128hst, M58LT128HSB description 9/110 figure 1. logic diagram table 1. signal names signal name function direction a0-a22 address inputs inputs dq0-dq15 data input/outputs, command inputs i/o e chip enable input g output enable input w write enable input rp reset input k clock input l latch enable input wait wait output v dd supply voltage input v ddq supply voltage for input/output buffers input v pp optional supply voltage for fast program & erase input v ss ground v ssq ground input/output supply input nc not connected internally du do not use ai12887 a0-a22 w dq0-dq15 v dd m58lt128hst M58LT128HSB e v ss 16 g rp v ddq v pp l k wait v ssq
description m58lt128hst, M58LT128HSB 10/110 figure 2. tbga64 package connections (top view through package) ai10270b dq6 a0 v ssq v dd dq10 v dd dq7 dq5 v ddq dq2 h dq14 v ss dq13 d a15 a19 e a8 c a16 a20 a10 a14 k a7 b a18 a1 a12 a13 a 8 7 6 5 4 3 2 1 a6 a2 a3 a4 g f e dq0 a5 v pp a17 a9 a11 rp dq15 dq9 dq8 dq1 dq4 dq3 g dq12 dq11 w v ss nc nc nc nc nc nc nc nc nc a21 a22 wait nc nc l
m58lt128hst, M58LT128HSB description 11/110 figure 3. memory map table 2. bank architecture number bank size parameter blocks main blocks parameter bank 8 mbits 4 blocks of 16 kwords 7 blocks of 64 kwords bank 1 8 mbits - 8 blocks of 64 kwords bank 2 8 mbits - 8 blocks of 64 kwords bank 3 8 mbits - 8 blocks of 64 kwords ---- ---- ---- ---- bank 14 8 mbits - 8 blocks of 64 kwords bank 15 8 mbits - 8 blocks of 64 kwords ai12888 m58lt128hst - top boot block address lines a0-a16 8 main blocks bank 15 M58LT128HSB - bottom boot block address lines a0-a16 64 kword 000000h 00ffffh 64 kword 070000h 07ffffh 64 kword 600000h 60ffffh 64 kword 670000h 67ffffh 64 kword 680000h 68ffffh 64 kword 6f0000h 6fffffh 64 kword 700000h 70ffffh 64 kword 770000h 77ffffh 64 kword 780000h 78ffffh 64 kword 7e0000h 7effffh 16 kword 7f0000h 7f3fffh 16 kword 7fc000h 7fffffh 4 parameter blocks parameter bank parameter bank 16 kword 000000h 003fffh 16 kword 00c000h 00ffffh 64 kword 010000h 01ffffh 64 kword 070000h 07ffffh 64 kword 080000h 08ffffh 64 kword 0f0000h 0fffffh 64 kword 100000h 10ffffh 64 kword 170000h 17ffffh 64 kword 180000h 18ffffh 64 kword 1f0000h 1fffffh 64 kword 780000h 78ffffh 64 kword 7f0000h 7fffffh bank 3 bank 2 bank 1 bank 15 bank 3 bank 2 bank 1 8 main blocks 8 main blocks 8 main blocks 7 main blocks 4 parameter blocks 7 main blocks 8 main blocks 8 main blocks 8 main blocks 8 main blocks
signal descriptions m58lt128hst, M58LT128HSB 12/110 2 signal descriptions see figure 1: logic diagram and table 1: signal names , for a brief overview of the signals connected to this device. 2.1 address inputs (a0-a22) the address inputs select the cells in the memory array to access during bus read operations. during bus write operations they control the commands sent to the command interface of the program/erase controller. 2.2 data inputs/outputs (dq0-dq15) the data i/o output the data stored at the selected address during a bus read operation or input a command or the data to be programmed during a bus write operation. 2.3 chip enable (e ) the chip enable input activates the memory control logic, input buffers, decoders and sense amplifiers. when chip enable is at v il and reset is at v ih the device is in active mode. when chip enable is at v ih the memory is deselected, the outputs are high impedance and the power consumption is reduced to the standby level. 2.4 output enable (g ) the output enable input controls data outputs during the bus read operation of the memory. 2.5 write enable (w ) the write enable input controls the bus write operation of the memory?s command interface. the data and address inputs are latched on the rising edge of chip enable or write enable whichever occurs first. 2.6 reset (rp ) the reset input provides a hardware reset of the memory. when reset is at v il , the memory is in reset mode: the outputs are high impedance and the current consumption is reduced to the reset supply current i dd2 . refer to table 20: dc characteristics - currents , for the value of i dd2. after reset all blocks are in the protected state and the configuration register is reset. when reset is at v ih , the device is in normal operation. exiting reset mode the device enters asynchronous read mode, but a negative transition of chip enable or latch enable is required to ensure valid data outputs.
m58lt128hst, M58LT128HSB signal descriptions 13/110 2.7 latch enable (l ) latch enable latches the address bits on its rising edge. the address latch is transparent when latch enable is at v il and it is inhibited when latch enable is at v ih . 2.8 clock (k) the clock input synchronizes the memory to the microcontroller during synchronous read operations; the address is latched on a clock edge (rising or falling, according to the configuration settings) when latch enable is at v il . clock is ignored during asynchronous read and in write operations. 2.9 wait (wait) wait is an output signal used during synchronous read to indicate whether the data on the output bus are valid. this output is high impedance when chip enable is at v ih , output enable is at v ih or reset is at v il . it can be configured to be active during the wait cycle or one clock cycle in advance. 2.10 v dd supply voltage v dd provides the power supply to the internal core of the memory device. it is the main power supply for all operations (read, program and erase). 2.11 v ddq supply voltage v ddq provides the power supply to the i/o pins and enables all outputs to be powered independently from v dd . 2.12 v pp program supply voltage v pp is both a control input and a power supply pin. the two functions are selected by the voltage range applied to the pin. if v pp is kept in a low voltage range (0v to v ddq ) v pp is seen as a control input. in this case a voltage lower than v pplk gives absolute protection against program or erase, while v pp in the v pp1 range enables these functions (see tables 20 and 21 , dc characteristics for the relevant values). v pp is only sampled at the beginning of a program or erase; a change in its value after the operation has started does not have any effect and program or erase operations continue. if v pp is in the range of v pph it acts as a power supply pin. in this condition v pp must be stable until the program/erase algorithm is completed.
signal descriptions m58lt128hst, M58LT128HSB 14/110 2.13 v ss ground v ss ground is the reference for the core supply. it must be connected to the system ground. 2.14 v ssq ground v ssq ground is the reference for the input/output circuitry driven by v ddq . v ssq must be connected to v ss note: each device in a system should have v dd , v ddq and v pp decoupled with a 0.1f ceramic capacitor close to the pin (high frequency, inhere ntly low inductance capacitors should be as close as possible to the package). see figure 8: ac measurement load circuit . the pcb track widths should be sufficient to carry the required v pp program and erase currents.
m58lt128hst, M58LT128HSB bus operations 15/110 3 bus operations there are six standard bus operations that control the device. these are bus read, bus write, address latch, output disable, standby and reset. see table 3: bus operations , for a summary. typically glitches of less than 5ns on chip enable or write enable are ignored by the memory and do not affect bus write operations. 3.1 bus read bus read operations are used to output the contents of the memory array, the electronic signature, the status register and the common flash interface. both chip enable and output enable must be at v il in order to perform a read operation. the chip enable input should be used to enable the device. output enable should be used to gate data onto the output. the data read depends on the previous command written to the memory (see command interface section). see figures 9 , 10 and 11 read ac waveforms, and tables 22 and 23 read ac characteristics, for details of when the output becomes valid. 3.2 bus write bus write operations write commands to the memory or latch input data to be programmed. a bus write operatio n is initiated when chip enable and write enable are at v il with output enable at v ih . commands, input data and addresses are latched on the rising edge of write enable or chip enable, whichever occurs first. the addresses must be latched prior to the write operation by toggling latch enable (when chip enable is at v il ). the latch enable must be tied to v ih during the bus write operation. see figures 15 and 16 , write ac waveforms, and tables 24 and 25 , write ac characteristics, for details of the timing requirements. 3.3 address latch address latch operations input valid addresses. both chip enable and latch enable must be at v il during address latch operations. the addresses are latched on the rising edge of latch enable. 3.4 output disable the outputs are high impedance when the output enable is at v ih .
bus operations m58lt128hst, M58LT128HSB 16/110 3.5 standby standby disables most of the internal circuitry allowing a substantial reduction of the current consumption. the memory is in standby when chip enable and reset are at v ih . the power consumption is reduced to the standby level i dd3 and the outputs are set to high impedance, independently from the output enable or write enable inputs. if chip enable switches to v ih during a program or erase operation, the device enters standby mode when finished. 3.6 reset during reset mode the memory is deselected and the outputs are high impedance. the memory is in reset mode when reset is at v il . the power consumption is reduced to the reset level, independently from the chip enable, output enable or write enable inputs. if reset is pulled to v ss during a program or erase, this operation is aborted and the memory content is no longer valid. table 3. bus operations (1) 1. x = don't care. operation e g w l rp wait (2) 2. wait signal polarity is configured us ing the set configuration register command. dq15-dq0 bus read v il v il v ih v il (3) 3. l can be tied to v ih if the valid address has been previously latched. v ih data output bus write v il v ih v il v il (3) v ih data input address latch v il xv ih v il v ih data output or hi-z (4) 4. depends on g . output disable v il v ih v ih xv ih hi-z hi-z standby v ih xxxv ih hi-z hi-z reset xxxxv il hi-z hi-z
m58lt128hst, M58LT128HSB command interface 17/110 4 command interface all bus write operations to the memory are interpreted by the command interface. commands consist of one or more sequential bus write operations. an internal program/erase controller handles all timings and verifies the correct execution of the program and erase commands. the program/erase controller provides a status register whose output may be read at any time to monitor the progress or the result of the operation. the command interface is reset to read mode when power is first applied, when exiting from reset or whenever v dd is lower than v lko . command sequences must be followed exactly. any invalid combination of commands will be ignored. refer to table 4: command codes , table 5: standard commands , ta bl e 6 : fa c t o r y commands , and appendix d: command interface state tables , for a summary of the command interface. table 4. command codes hex code command 01h block protect confirm 03h set configuration register confirm 10h alternative program setup 20h block erase setup 40h program setup 50h clear status register 60h block protect setup, block unprotect setup and set configuration register setup 70h read status register 80h buffer enhanced factory program setup 90h read electronic signature 98h read cfi query b0h program/erase suspend bch blank check setup c0h protection register program cbh blank check confirm d0h program/erase resume, block erase confir m, block unprotect confirm, buffer program or buffer enhanced factory program confirm e8h buffer program ffh read array
command interface m58lt128hst, M58LT128HSB 18/110 4.1 read array command the read array command returns the addressed bank to read array mode. one bus write cycle is required to issue the r ead array command. once a bank is in read array mode, subsequent read operations will output the data from the memory array. a read array command can be issued to any banks while programming or erasing in another bank. if the read array command is issued to a bank currently executing a program or erase operation, the ba nk will return to read array mode bu t the program or erase operation will continue, however the data output from the bank is not guaranteed until the program or erase operation has finished. the read modes of other banks are not affected. 4.2 read status register command the device contains a status register that is used to monitor program or erase operations. the read status register command is used to read the contents of the status register for the addressed bank. one bus write cycle is required to issue the read status register command. once a bank is in read status register mo de, subsequent read oper ations will output th e contents of the status register. the status register data is la tched on the falling edge of the ch ip enable or output enable signals. either chip enable or output enable must be toggled to update the status register data the read status register command can be issued at any time, even during program or erase operations. the read stat us register command will only change the read mode of the addressed bank. the read modes of other banks are not affected. only asynchronous read and single synchronous read operations sh ould be used to read the status register. a read array command is required to return the bank to read array mode. see ta bl e 9 for the description of the status register bits.
m58lt128hst, M58LT128HSB command interface 19/110 4.3 read electronic signature command the read electronic signature command is used to read the manufacturer and device codes, the protection status of the addressed bank, the protection register, and the configuration register. one bus write cycle is required to issue the read electronic signature command. once a bank is in read electronic signature mode, subsequent read operations in the same bank will output the manufacturer code, the device c ode, the protection status of the addressed bank, the protection register, or the configuration register (see ta bl e 8 ). the read electronic signature command can be issued at any time, even during program or erase operations, except during protection register program operations. dual operations between the parameter bank and the electronic signature location are not allowed (see table 15: dual operation limitations for details). if a read electronic signature command is issu ed to a bank that is executing a program or erase operation the bank will go into read electronic si gnature mode. subsequent bus read cycles will output the electronic sig nature data and the prog ram/erase controller will continue to program or erase in the background. the read electronic signatur e command will only change the r ead mode of the addressed bank. the read modes of other banks are not affected. only asynchronous read and single synchronous read operations should be used to read the electronic signature. a read array command is required to return the bank to read array mode. 4.4 read cfi query command the read cfi query command is used to read data from the common flash interface (cfi). one bus write cycle is required to issue the read cfi query command. once a bank is in read cfi query mode, subsequent bus read operations in the same bank read from the common flash interface. the read cfi query command can be issued at any time, even during program or erase operations. if a read cfi query command is issued to a bank that is executing a program or erase operation the bank will go into read cfi query mode. subsequent bus read cycles will output the cfi data and the program/erase co ntroller will continue to program or erase in the background. the read cfi query command will only change the read mode of the addressed bank. the read modes of other banks are not affected. only asynchronous read and single synchronous read operations should be used to read from the cfi. a read array command is required to return the bank to read array mode. dual operations between the parameter bank and the cfi memory space are not allowed (see table 15: dual operation limitations for details). see appendix b: common flash interface , tables 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 and 40 for details on the information contained in the common flash interface memory area.
command interface m58lt128hst, M58LT128HSB 20/110 4.5 clear status register command the clear status register command can be used to reset (set to ?0?) all error bits (sr1, 3, 4 and 5) in the status register. one bus write cycle is required to issue the clear status register command. the clear status register command does not affect the read mode of the bank. the error bits in the status register do not automatically return to ?0? when a new command is issued. the error bits in the status register should be cleared before attempting a new program or erase command. 4.6 block erase command the block erase command is used to erase a block. it sets all the bits within the selected block to ?1?. all previous data in the block is lost. if the block is protected then the erase oper ation will abort, the data in the block will not be changed and the stat us register will output the error. two bus write cycles are required to issue the command. the first bus cycle sets up the block erase command. the second latches the block address and starts the program/erase controller. if the second bus cycle is not the block erase confirm code, status register bits sr4 and sr5 are set and the command is aborted. once the command is issued the bank enters read status register mode and any read operation within the addre ssed bank will output the contents of the status re gister. a read array command is required to return the bank to read array mode. during block erase operations the bank containi ng the block being erased will only accept the read array, read status register, read electronic signature, read cfi query and the program/erase suspend command, all other comm ands will be ignored. the block erase operation aborts if reset, rp , goes to v il . as data integrity cannot be guaranteed when the block erase operation is aborted, the block must be erased again. refer to dual operations section for detailed information about simultaneous operations allowed in banks not being erased. typical erase times are given in table 16: program/erase times and endurance cycles . see appendix c , figure 23: block erase flowchart and pseudo code , for a suggested flowchart for using the block erase command.
m58lt128hst, M58LT128HSB command interface 21/110 4.7 blank check command the blank check command is used to check w hether a block has been completely erased. only one block at a time can be checked. to use the blank check command v pp must be equal to v pph . if v pp is not equal to v pph , the device ignores the command and no error is shown in the status register. two bus cycles are required to issue the blank check command: the first bus cycle writes the blank check command (bch) to any address in the block to be checked. the second bus cycle writes the blank check confirm command (cbh) to any address in the block to be checked and starts the blank check operation. if the second bus cycle is not blank check confirm, status register bits sr4 and sr5 are set to '1' and the command aborts. once the command is issued the addressed bank automatically enters the status register mode and further reads within the bank output the status register contents. the only operation permitted during blank check is read status register. dual operations are not supported while a blank check operation is in progress. blank check operations cannot be suspended and are not allowed while the device is in program/erase suspend. the sr7 status register bit indicates the status of the blank check operation in progress: sr7 = '0' means that the blank check operation is still ongoing. sr7 = '1' means that the operation is complete. the sr5 status register bit goes high (sr5 = '1') to indicate that the blank check operation has failed. at the end of the operation the bank remains in the read status register mode until another command is written to the command interface. see appendix c , figure 20: blank check flowchart and pseudo code , for a suggested flowchart for using the blank check command. typical blank check times are given in table 16: program/erase times and endurance cycles .
command interface m58lt128hst, M58LT128HSB 22/110 4.8 program command the program command is used to program a single word to the memory array. if the block being programmed is protected, th en the program operation will abort, the data in the block will not be changed and the st atus register will output the error. two bus write cycles are required to issue the program command. the first bus cycle sets up the program command. the second latches the address and data to be programmed and starts the program/erase controller. once the programming has started, read operations in the bank being programmed output the status register content. during a program operation, the bank cont aining the word being programmed will only accept the read array, read status register, read electronic signature, read cfi query and the program/erase suspe nd command, all other comman ds will be ignor ed. a read array command is required to return the bank to read array mode. refer to dual operations section for detailed information about simultaneous operations allowed in banks not being programmed. typical program times are given in table 16: program/erase times and endurance cycles . the program operation aborts if reset, rp , goes to v il . as data integrity cannot be guaranteed when the program operation is aborted, the word must be reprogrammed. see appendix c , figure 19: program flowchart and pseudo code , for the flowchart for using the program command.
m58lt128hst, M58LT128HSB command interface 23/110 4.9 buffer program command the buffer program command makes use of the device?s 32-word write buffer to speed up programming. up to 32 words can be loaded into the write buffer. the buffer program command dramatically reduces in-system programming time compared to the standard non- buffered program command. four successive steps are required to issue the buffer program command. 1. the first bus write cycle sets up the buffer program command. the setup code can be addressed to any location within the targeted block. after the first bus write cycle, read operation s in the bank will output the contents of the status register. status register bit sr7 should be read to check that the buffer is available (sr7 = 1). if the buffer is not available (sr7 = 0), re-issue the buffer program command to update the status register contents. 2. the second bus write cycle sets up the number of words to be programmed. value n is written to the same block address, where n+1 is the number of words to be programmed. 3. use n+1 bus write cycles to load the address and data for each word into the write buffer. addresses must lie within the range from the start address to the start address + n, where the start address is the location of the first data to be programmed. optimum performance is obtained when the start address corresponds to a 32 word boundary. 4. the final bus write cycle confirms the buffer program command and starts the program operation. all the addresses used in the buffer program operation must lie within the same block. invalid address combinations or failing to follow the correct sequence of bus write cycles will set an error in the status register and abo rt the operation without affecting the data in the memory array. if the block being programmed is protected an er ror will be set in the status register and the operation will abort without affectin g the data in the memory array. during buffer program operations the bank being programmed will only accept the read array, read status register, read electronic signature, read cfi query and the program/erase suspend command, all other comm ands will be ignored. refer to dual operations section for detailed information about simultaneous operations allowed in banks not being programmed. see appendix c , figure 21: buffer program flowchart and pseudo code , for a suggested flowchart on using the buffer program command.
command interface m58lt128hst, M58LT128HSB 24/110 4.10 buffer enhanced factory program command the buffer enhanced factory program command has been specially developed to speed up programming in manufacturing environments where the programming time is critical. it is used to program one or more write buffer(s) of 32 words to a block. once the device enters buffer enhanced factory program mode, the write buffer can be reloaded any number of times as long as the address remains within the same block. only one block can be programmed at a time. if the block being programmed is protected, th en the program operation will abort, the data in the block will not be changed and the st atus register will output the error. the use of the buffer enhanced factory program command requires certain operating conditions: v pp must be set to v pph v dd must be within operating range ambient temperature t a must be 30c 10c the targeted block must be unprotected the start address must be aligned with the start of a 32 word buffer boundary the address must remain the start address throughout programming. dual operations are not supported during the buffer enhanced factory program operation and the command cannot be suspended. the buffer enhanced factory program command consists of three phases: the setup phase, the program and verify phase, and the exit phase, please refer to ta bl e 6 : fa c t o r y commands for detail information. 4.10.1 setup phase the buffer enhanced factory program command requires two bus write cycles to initiate the command. the first bus write cycle sets up the buffer enhanced factory program command. the second bus write cycle confirms the command. after the confirm command is issued, read operations output the contents of the status register. the read status regi ster command must not be issu ed as it will be interpreted as data to program. the status register p/e.c. bit sr7 should be read to check that the p/e.c. is ready to proceed to the next phase. if an error is detected, sr4 goes high (set to ?1?) and the buffer enhanced factory program operation is terminated. see status register section for details on the error.
m58lt128hst, M58LT128HSB command interface 25/110 4.10.2 program an d verify phase the program and verify phase requires 32 cycles to program the 32 words to the write buffer. the data is stored sequentially, starting at the first address of the write buffer, until the write buffer is full (32 words). to program less than 32 words, the remaining words should be programmed with ffffh. three successive steps are required to issue and execute the program and verify phase of the command. 1. use one bus write operation to latch the start address and the first word to be programmed. the status register bank write status bit sr0 should be read to check that the p/e.c. is ready for the next word. 2. each subsequent word to be programmed is latched with a new bus write operation. the address must remain the start address as the p/e.c. increments the address location.if any address that is not in the same block as the start address is given, the program and verify phase terminates. status register bit sr0 should be read between each bus write cycle to check that the p/e.c. is ready for the next word. 3. once the write buffer is full, the data is programmed sequentially to the memory array. after the program operation the device automatically verifies the data and reprograms if necessary. the program and verify phase can be repeated, without re-issuing the command, to program additional 32 word locations as long as the address remains in the same block. 4. finally, after all words, or the entire block have been programmed, write one bus write operation to any address outside the block containing the start address, to terminate program and verify phase. status register bit sr0 must be checked to determine whether the program operation is finished. the status register may be checked for errors at any time but it must be checked after the entire block has been programmed. 4.10.3 exit phase status register p/e.c. bit sr7 set to ?1? indicates that the device has exited the buffer enhanced factory program operation and returned to read status register mode. a full status register check should be done to ensure that the block has been successfully programmed. see the section on the status register for more details. for optimum performance the buffer enhanced factory program command should be limited to a maximum of 100 program/erase cycles per block. if this limit is exceeded the internal algorithm will continue to work properly but some degradation in performance is possible. typical program times are given in ta bl e 1 6 . see appendix c , figure 27: buffer enhanced factory program flowchart and pseudo code , for a suggested flowchart on using the buffer enhanced factory program command.
command interface m58lt128hst, M58LT128HSB 26/110 4.11 program/erase suspend command the program/erase suspend command is used to pause a program or block erase operation. the command can be addressed to any bank. the program/erase resume command is required to restart the suspended operation. one bus write cycle is required to issue the program/erase suspend command. once the program/erase controller has paused bits sr7, sr6 and/ or sr2 of th e status register will be set to ?1?. the following commands are accepted during program/erase suspend: ? program/erase resume ? read array (data from erase-suspended block or program-suspended word is not valid) ? read status register ? read electronic signature ? read cfi query additionally, if the suspended operation was a block erase then the following commands are also accepted: ? clear status register ? program (except in erase-suspended block) ? buffer program (except in erase suspended blocks) ? block protect ? block unprotect ? set configuration register during an erase suspend the block being erased can be protected by issuing the block protect command. when the program/erase resu me command is issued the operation will complete. it is possible to accumulate multiple suspend operations. for example: suspend an erase operation, start a program operation, suspend the program operation, then read the array. if a program command is issued during a block erase suspend, the erase operation cannot be resumed until the program operation has completed. the program/erase suspend command does not change the read mode of the banks. if the suspended bank was in read status register, read electronic signature or read cfi query mode the bank remains in that mode and outputs the corresponding data. refer to dual operations section for detailed information about simultaneous operations allowed during program/erase suspend. during a program/erase suspend, the device can be placed in standby mode by taking chip enable to v ih . program/erase is aborted if reset, rp , goes to v il . see appendix c , figure 22: program suspend & resume flowchart and pseudo code , and figure 24: erase suspend & resume flowchart and pseudo code , for flowcharts for using the program/erase suspend command.
m58lt128hst, M58LT128HSB command interface 27/110 4.12 program/erase resume command the program/erase resume command is used to restart the program or erase operation suspended by the program/erase suspend command. one bus write cycle is required to issue the command. the command can be issued to any address. the program/erase resume command does not change the read mode of the banks. if the suspended bank was in read status register, read electronic signature or read cfi query mode the bank remains in that mode and outputs the corresponding data. if a program command is issued during a block erase suspend, then the erase cannot be resumed until the program operation has completed. see appendix c , figure 22: program suspend & resume flowchart and pseudo code , and figure 24: erase suspend & resume flowchart and pseudo code , for flowcharts for using the program/erase resume command. 4.13 protection register program command the protection register program command is used to program the user one-time- programmable (otp) segments of the protection register and the two protection register locks. the device features 16 otp segments of 128 bits and one otp segment of 64 bits, as shown in figure 4: protection register memory map . the segments are programmed one word at a time. when shipped all bits in the segment are set to ?1?. the user can only program the bits to ?0?. two bus write cycles are required to issue the protection register program command. the first bus cycle sets up the pr otection register program command. the second latches the address and data to be programmed to the protection register and starts the program/erase controller. read operations to the bank being programmed output the status register content after the program operation has started. attempting to program a previo usly protected protection regist er will result in a status register error. the protection register program cannot be suspended. dual operations between the parameter bank and the protection register memory space are not allowed (see table 15: dual operation limitations for details) the two protection register locks are used to protect the otp segments from further modification. the protection of the otp segments is not reversible. refer to figure 4: protection register memory map , and table 8: protection register locks , for details on the lock bits. see appendix c , figure 26: protection register program flowchart and pseudo code , for a flowchart for using the protection register program command.
command interface m58lt128hst, M58LT128HSB 28/110 4.14 set configuration register command the set configuration register command is used to write a new value to the configuration register. two bus write cycles are required to issue the set configuration register command. the first cycle sets up the set configuration register command and the address corresponding to the configuration register content. the second cycle writes the configuration register data and the confirm command. the configuration register data must be written as an address during the bus write cycles, that is a0 = cr0, a1 = cr1, ?, a15 = cr15. addresses a16-a22 are ignored. read operations output the array content after the set configuration register command is issued. the read electronic signature command is required to read the updated contents of the configuration register. 4.15 block protect command the block protect command is used to protect a block and prevent program or erase operations from changing the data in it. all blocks are protected after power-up or reset. two bus write cycles are required to issue the block protect command. the first bus cycle sets up the block protect command. the second bus write cycle latches the bl ock address and protects the block. once the command has been issued subsequent bus read operations read the status register. the protection status can be monitored for each block using the read electronic signature command. refer to section 9: block protection , for a detailed explanation. see appendix c , figure 25: protect/unprotect operation flowchart and pseudo code , for a flowchart for using the block protect command. 4.16 block unprotect command the block unprotect command is used to unprotect a block, allowing the block to be programmed or erased. two bus write cycles are required to issue the block unprotect command. the first bus cycle sets up the block unprotect command. the second bus write cycle latches the bl ock address and unprotects the block. once the command has been issued subsequent bus read operations read the status register. the protection status can be monitored for each block using the read electronic signature command. refer to section 9: block protection , for a detailed explanation and appendix c , figure 25: protect/unprotect operation flowchart and pseudo code , for a flowchart for using the block unprotect command.
m58lt128hst, M58LT128HSB command interface 29/110 table 5. standard commands (1) 1. x = don't care, wa = word address in targeted bank, rd =read data, srd =status register data, esd = electronic signature data, qd =query data, ba =block address, bka = bank address, pd = program data, pra = protection register address, prd = prot ection register data, crd = configuration register data. commands cycles bus operations 1 st cycle 2 nd cycle op. add data op. add data read array 1+ write bka ffh read wa rd read status register 1+ write bka 70h read bka (2) 2. must be same bank as in the first cyc le. the signature addresses are listed in table 7 . srd read electronic signature 1+ write bka 90h read bka (2) esd read cfi query 1+ write bka 98h read bka (2) qd clear status register 1 write x 50h block erase 2 write bka or ba (3) 3. any address within the bank can be used. 20h write ba d0h program 2 write bka or wa (3) 40h or 10h write wa pd buffer program (4) 4. n+1 is the number of words to be programmed. n+4 write ba e8h write ba n write pa 1 pd 1 write pa 2 pd 2 write pa n+1 pd n+1 write x d0h program/erase suspend 1 write x b0h program/erase resume 1 write x d0h protection register program 2 write pra c0h write pra prd set configuration register 2 write crd 60h write crd 03h block protect 2 write bka or ba (3) 60h write ba 01h block unprotect 2 write bka or ba (3) 60h write ba d0h
command interface m58lt128hst, M58LT128HSB 30/110 table 6. factory commands command phase cycles bus write operations (1) 1. wa = word address in targeted bank, bka = bank addr ess, pd =program data, ba = block address, x = don?t care. 1 st 2 nd 3 rd final -1 final add data add data add data add data add data blank check 2 ba bch ba cbh buffer enhanced factory program setup 2 bka or wa (2) 2. any address within the bank can be used. 80h wa 1 d0h program/ verify (3) 3. the program/verify phase can be executed any number of times as long as the data is to be programmed to the same block. 32 wa 1 pd 1 wa 1 pd 2 wa 1 pd 3 wa 1 pd 31 wa 1 pd 32 exit 1 not ba 1 (4) 4. wa 1 is the start address, not ba 1 = not block address of wa 1 . x table 7. electronic signature codes code address (h) data (h) manufacturer code bank address + 000 0020 device code top bank address + 001 88d6 (m58lt128hst) bottom bank address + 001 88d7 (M58LT128HSB) block protection protected block address + 002 0001 unprotected 0000 configuration register bank address + 005 cr (1) 1. cr = configuration register, prld = protection register lock data. protection register pr0 lock st factory default bank address + 080 0002 otp area permanently protected 0000 protection register pr0 bank address + 081 bank address + 084 unique device number bank address + 085 bank address + 088 otp area protection register pr1 through pr16 lock bank address + 089 prld (1) protection registers pr1-pr16 bank address + 08a bank address + 109 otp area
m58lt128hst, M58LT128HSB command interface 31/110 figure 4. protection register memory map ai07563 user programmable otp unique device number protection register lock 1 0 88h 88h 85h 84h 81h 80h user programmable otp protection registers user programmable otp protection register lock 10 432 975 13 12 10 11 8 6 14 15 pr1 pr16 pr0 89h 8ah 91h 102h 109h
command interface m58lt128hst, M58LT128HSB 32/110 table 8. protection register locks lock description number address bits lock 1 80h bit 0 preprogrammed to protect unique device number, address 81h to 84h in pr0 bit 1 protects 64bits of otp segment, address 85h to 88h in pr0 bits 2 to 15 reserved lock 2 89h bit 0 protects 128bits of otp segment pr1 bit 1 protects 128bits of otp segment pr2 bit 2 protects 128bits of otp segment pr3 ---- ---- bit 13 protects 128bits of otp segment pr14 bit 14 protects 128bits of otp segment pr15 bit 15 protects 128bits of otp segment pr16
m58lt128hst, M58LT128HSB status register 33/110 5 status register the status register provides information on the current or previous program or erase operations. issue a read status register command to read the contents of the status register, refer to read status register command section for more details. to output the contents, the status register is latched and up dated on the falling edge of the chip enable or output enable signals and can be read until chip enable or output enable returns to v ih . the status register can only be read using single asynchronous or single synchronous reads. bus read operations from any address within the bank always read the status register during program and erase operations if no read array command has been issued. the various bits convey information about the status and any errors of the operation. bits sr7, sr6, sr2 and sr0 give information on the status of the device and are set and reset by the device. bits sr5, sr4, sr3 and sr1 give information on errors, they are set by the device but must be reset by issuing a clear status register command or a hardware reset. if an error bit is set to ?1? the status register should be reset before issuing another command. the bits in the status register are summarized in table 9: status register bits . refer to ta bl e 9 in conjunction with the fo llowing text descriptions. 5.1 program/erase controller status bit (sr7) the program/erase controller status bit indicates whether the program/erase controller is active or inactive in any bank. when the program/erase controller status bit is low (set to ?0?), the program/erase controller is active; when the bit is high (set to ?1?), the program/erase controller is inactive, and the device is ready to process a new command. the program/erase controller status bit is low immediately after a program/erase suspend command is issued until the program/erase controller pauses. after the program/erase controller pauses the bit is high. 5.2 erase suspend status bit (sr6) the erase suspend status bit indicates that an erase operation has been suspended. when the erase suspend status bit is high (set to ?1?), a program/erase suspend command has been issued and the memory is waiting for a program/erase resume command. the erase suspend status bit should only be considered valid when the program/erase controller status bit is high (program/erase c ontroller inactive). sr6 is set within the erase suspend latency time of the program/erase suspend command being issued therefore the memory may still complete th e operation rather than entering the suspend mode. when a program/erase resume command is issued the erase suspend status bit returns low.
status register m58lt128hst, M58LT128HSB 34/110 5.3 erase/blank check status bit (sr5) the erase/blank check status bit is used to identify if there was an error during a block erase operation. when the erase/blank check status bit is high (set to ?1?), the program/erase controller has applied the maximu m number of pulses to the block and still failed to verify that it has erased correctly. the erase/blank check status bit should be read once the program/erase controller status bit is high (program/erase controller inactive). the erase/blank check status bit is also used to indicate whether an error occurred during the blank check operation: if the data at one or more locations in the block where the blank check command has been issued is different from ffffh, sr5 is set to '1'. once set high, the erase/blank check status bit must be set low by a clear status register command or a hardware reset before a new erase command is issued, otherwise the new command will appear to fail. 5.4 program status bit (sr4) the program status bit is used to identify if there was an error during a program operation. the program status bit should be read once the program/erase controller status bit is high (program/erase controller inactive). when the program status bit is high (set to ?1?), the program/erase controller has applied the maximum number of pulses to the word and still failed to verify that it has programmed correctly. attempting to program a '1' to an already programmed bit while v pp = v pph will also set the program status bit high. if v pp is different from v pph , sr4 remains low (set to '0') and the attempt is not shown. once set high, the program status bit must be set low by a clear status register command or a hardware reset before a new program command is issued, otherwise the new command will appear to fail. 5.5 v pp status bit (sr3) the v pp status bit is used to identify an invalid voltage on the v pp pin during program and erase operations. the v pp pin is only sampled at the beginning of a program or erase operation. program and erase operations are not guaranteed if v pp becomes invalid during an operation when the v pp status bit is low (set to ?0?), the voltage on the v pp pin was sampled at a valid voltage. when the v pp status bit is high (set to ?1?), the v pp pin has a voltage that is below the v pp lockout voltage, v pplk , the memory is protected and program and erase operations cannot be performed. once set high, the v pp status bit must be set low by a clear status register command or a hardware reset before a new program or erase command is issued, otherwise the new command will appear to fail.
m58lt128hst, M58LT128HSB status register 35/110 5.6 program suspend status bit (sr2) the program suspend status bit indicates that a program operation has been suspended. the program suspend status bit should only be considered valid when the program/erase controller status bit is high (pro gram/erase controller inactive). when the program suspend status bit is high (set to ?1?), a program/erase suspend command has been issued and the memory is waiting for a program/erase resume command. sr2 is set within the program suspend latency time of the program/erase suspend command being issued therefore the memory ma y still complete the ope ration rather than entering the suspend mode. when a program/erase resume command is issued the program suspend status bit returns low. 5.7 block protection status bit (sr1) the block protection status bit is used to iden tify if a program or block erase operation has tried to modify the contents of a protected block. when the block protection status bit is high (set to ?1?), a program or erase operation has been attempted on a protected block. once set high, the block protection status bit must be set low by a clear status register command or a hardware reset before a new program or erase command is issued, otherwise the new command will appear to fail. 5.8 bank write/multiple word program status bit (sr0) the bank write status bit indicates whether the addressed bank is programming or erasing. in buffer enhanced factory program mode the multiple word program bit shows if the device is ready to accept a new word to be programmed to the memory array. the bank write status bit should only be considered valid when the program/erase controller status sr7 is low (set to ?0?). when both the program/erase controller status bit and the bank write status bit are low (set to ?0?), the addressed bank is executing a program or erase operation. when the program/erase controller status bit is low (set to ?0?) and the bank write status bit is high (set to ?1?), a program or erase operation is being executed in a bank other than the one being addressed. in buffer enhanced factory program mode if multiple word program status bit is low (set to ?0?), the device is ready for the next word, if the multiple word program status bit is high (set to ?1?) the device is not ready for the next word. for further details on how to use the status register, see the flowcharts and pseudocodes provided in appendix c .
status register m58lt128hst, M58LT128HSB 36/110 table 9. status register bits bit name type logic level (1) 1. logic level '1' is high, '0' is low. definition sr7 p/e.c. status status '1' ready '0' busy sr6 erase suspend status status '1' erase suspended '0' erase in progress or completed sr5 erase/blank check status error '1' erase/blank check error '0' erase/blank check success sr4 program status error '1' program error '0' program success sr3 v pp status error '1' v pp invalid, abort '0' v pp ok sr2 program suspend status status '1' program suspended '0' program in progress or completed sr1 block protection status error '1' program/erase on protected block, abort '0' no operation to protected blocks sr0 bank write status status '1' sr7 = ?1? not allowed sr7 = ?0? program or erase operation in a bank other than the addressed bank '0' sr7 = ?1? no program or erase operation in the device sr7 = ?0? program or erase operation in addressed bank multiple word program status (buffer enhanced factory program mode) status '1' sr7 = ?1? not allowed sr7 = ?0? the device is not ready for the next buffer loading or is going to exit the befp mode '0' sr7 = ?1? the device has exited the befp mode sr7 = ?0? the device is ready for the next buffer loading
m58lt128hst, M58LT128HSB configuration register 37/110 6 configuration register the configuration register is used to configur e the type of bus access that the memory will perform. refer to read modes section for details on read operations. the configuration register is set through the command interface using the set configuration register command. after a reset or power-up the device is configured for asynchronous read (cr15 = 1). the configuration register bits are described in ta b l e 1 1 they specify the selection of the burst length, burst type, burst x latency and the read operation. refer to figures 5 and 6 for examples of synchronous burst configurations. 6.1 read select bit (cr15) the read select bit, cr15, is used to switch between asynchronous and synchronous read operations. when the read select bit is set to ?1?, read operations are asynchronous; when the read select bit is set to ?0?, read operations are synchronous. synchronous burst read is supported in both parameter and main blocks and can be performed across banks. on reset or power-up the read select bit is set to ?1? for asynchronous access. 6.2 x-latency bits (cr13-cr11) the x-latency bits are used during synchronous read operations to set the number of clock cycles between the address being latched and the first data becoming available. refer to figure 5: x-latency and data output configuration example . for correct operation the x-latency bits can only assume the values in ta b l e 1 1 : configuration register . ta bl e 1 0 shows how to set the x-latency parameter, taking into account the speed class of the device and the frequency used to read the flash memory in synchronous mode. table 10. x-latency settings fmax t k min x-latency min 30 mhz 33 ns 3 40 mhz 25 ns 4 52 mhz 19 ns 5
configuration register m5 8lt128hst, M58LT128HSB 38/110 6.3 wait polarity bit (cr10) the wait polarity bit is used to set the polarity of the wait signal used in synchronous burst read mode. during synchronous burst read mode the wait signal indicates whether the data output are valid or a wait state must be inserted. when the wait polarity bit is set to ?0? the wait signal is active low. when the wait polarity bit is set to ?1? the wait signal is active high. 6.4 data output configuration bit (cr9) the data output configuration bit is used to configure the output to remain valid for either one or two clock cycles during synchronous mode. when the data output configuration bit is ?0? the output data is valid for one clock cycle, when the data output configuration bit is ?1? the output data is valid for two clock cycles. the data output configuration must be configured using the following condition: t k > t kqv + t qvk_cpu where t k is the clock period t qvk_cpu is the data setup time required by the system cpu t kqv is the clock to data valid time. if this condition is not satisfied, the data outp ut configuration bit should be set to ?1? (two clock cycles). refer to figure 5: x-latency and data output configuration example . 6.5 wait configuration bit (cr8) the wait configuration bit is used to control the timing of the wait output pin, wait, in synchronous burst read mode. when wait is asserted, data is not valid an d when wait is de-asserted, data is valid. when the wait configuration bit is low (set to ?0?) the wait output pin is asserted during the wait state. when the wait configuration bit is high (set to ?1?), the wait output pin is asserted one data cycle before the wait state. 6.6 burst type bit (cr7) the burst type bit determines the sequence of addresses read during synchronous burst reads. the burst type bit is high (set to ?1?), as the memory outputs from sequential addresses only. see table 12: burst type definition , for the sequence of addresses output from a given starting address in sequential mode.
m58lt128hst, M58LT128HSB configuration register 39/110 6.7 valid clock edge bit (cr6) the valid clock edge bit, cr6, is used to configure the active edge of the clock, k, during synchronous read operations. wh en the valid clock edge bit is low (set to ?0?) the falling edge of the clock is the active edge. when the valid clock edge bit is high (set to ?1?) the rising edge of the clock is the active edge. 6.8 wrap burst bit (cr3) the wrap burst bit, cr3, is used to select between wrap and no wrap. synchronous burst reads can be confined inside the 4, 8 or 16 word boundary (wrap) or overcome the boundary (no wrap). when the wrap burst bit is low (set to ?0?) the burst read wraps. when it is high (set to ?1?) the burst read does not wrap. 6.9 burst length bits (cr2-cr0) the burst length bits are used to set the number of words to be output during a synchronous burst read operation as resu lt of a single address latch cycle. they can be set for 4 words, 8 words, 16 words or continuous burst, where all the words are read sequentially. in continuous burst mode the burst sequence can cross bank boundaries. in continuous burst mode, in 4, 8 or 16 words no-wrap, depending on the starting address, the device asserts the wait signal to indicate that a delay is necessary before the data is output. if the starting address is shifted by 1, 2 or 3 positions from the four-word boundary, wait is asserted for 1, 2 or 3 clock cycles, respectively, when the burst sequence crosses the first 16-word boundary, to indicate that the device nee ds an internal delay to read the successive words in the array. wait will be asserted on ly once during a continuous burst access. see also table 12: burst type definition . cr14, cr5 and cr4 are reserved for future use.
configuration register m5 8lt128hst, M58LT128HSB 40/110 table 11. configuration register bit description value description cr15 read select 0 synchronous read 1 asynchronous read (default at power-on) cr14 reserved cr13-cr11 x-latency 010 2 clock latency (1) 1. the combination x-latency=2, data held for two cloc k cycles and wait active one data cycle before the wait state is not supported. 011 3 clock latency 100 4 clock latency 101 5 clock latency 110 6 clock latency 111 7 clock latency (default) other configurations reserved cr10 wait polarity 0 wait is active low 1 wait is active high (default) cr9 data output configuration 0 data held for one clock cycle 1 data held for two clock cycles (default) (1) cr8 wait configuration 0 wait is active during wait state 1 wait is active one data cycle before wait state (1) (default) cr7 burst type 0reserved 1 sequential (default) cr6 valid clock edge 0 falling clock edge 1 rising clock edge (default) cr5-cr4 reserved cr3 wrap burst 0wrap 1 no wrap (default) cr2-cr0 burst length 001 4 words 010 8 words 011 16 words 111 continuous (default)
m58lt128hst, M58LT128HSB configuration register 41/110 table 12. burst type definition mode start add sequential continuous burst 4 words 8 words 16 words wrap 0 0-1-2-3 0-1-2-3-4-5-6- 7 0-1-2-3-4-5-6-7-8-9-10- 11-12-13-14-15 0-1-2-3-4-5-6... 1 1-2-3-0 1-2-3-4-5-6-7- 0 1-2-3-4-5-6-7-8-9-10- 11-12-13-14-15-0 1-2-3-4-5-6-7-...15-wait-16-17- 18... 2 2-3-0-1 2-3-4-5-6-7-0- 1 2-3-4-5-6-7-8-9-10-11- 12-13-14-15-0-1 2-3-4-5-6-7...15-wait-wait-16- 17-18... 3 3-0-1-2 3-4-5-6-7-0-1- 2 3-4-5-6-7-8-9-10-11-12- 13-14-15-0-1-2 3-4-5-6-7...15-wait-wait- wait-16-17-18... ... 7 7-4-5-6 7-0-1-2-3-4-5- 6 7-8-9-10-11-12-13-14- 15-0-1-2-3-4-5-6 7-8-9-10-11-12-13-14-15-wait- wait-wait-16-17... ... 12 12-13-14-15-16-17-18... 13 13-14-15-wait-16-17-18... 14 14-15-wait-wait-16-17-18.... 15 15-wait-wait-wait-16-17-18...
configuration register m5 8lt128hst, M58LT128HSB 42/110 no-wrap 0 0-1-2-3 0-1-2-3-4-5-6- 7 0-1-2-3-4-5-6-7-8-9-10- 11-12-13-14-15 same as for wrap (wrap /no wrap has no effect on continuous burst) 1 1-2-3-4 1-2-3-4-5-6-7- 8 1-2-3-4-5-6-7-8-9-10- 11-12-13-14-15-wait- 16 2 2-3-4-5 2-3-4-5-6-7-8- 9... 2-3-4-5-6-7-8-9-10-11- 12-13-14-15-wait- wait-16-17 3 3-4-5-6 3-4-5-6-7-8-9- 10 3-4-5-6-7-8-9-10-11-12- 13-14-15-wait-wait- wait-16-17-18 ... 7 7-8-9-10 7-8-9-10-11- 12-13-14 7-8-9-10-11-12-13-14- 15-wait-wait-wait- 16-17-18-19-20-21-22 ... 12 12-13-14- 15 12-13-14-15- 16-17-18-19 12-13-14-15-16-17-18- 19-20-21-22-23-24-25- 26-27 13 13-14-15- wait-16 13-14-15- wait-16-17- 18-19-20 13-14-15-wait-16-17- 18-19-20-21-22-23-24- 25-26-27-28 14 14-15- wait- wait-16- 17 14-15-wait- wait-16-17- 18-19-20-21 14-15-wait-wait-16- 17-18-19-20-21-22-23- 24-25-26-27-28-29 15 15-wait- wait- wait-16- 17-18 15-wait- wait-wait- 16-17-18-19- 20-21-22 15-wait-wait-wait- 16-17-18-19-20-21-22- 23-24-25-26-27-28-29- 30 table 12. burst type definition (continued) mode start add sequential continuous burst 4 words 8 words 16 words
m58lt128hst, M58LT128HSB configuration register 43/110 figure 5. x-latency and data output configuration example 1. the settings shown are x-latency = 4, data output held for one clock cycle. figure 6. wait configuration example ai10542 a22-a0 valid address k l dq15-dq0 valid data x-latency valid data tacc tavk_cpu tk tqvk_cpu tqvk_cpu tkqv 1st cycle 2nd cycle 3rd cycle 4th cycle e tdelay ai06972 a22-a0 valid address k l dq15-dq0 valid data wait cr8 = '0' cr10 = '0' wait cr8 = '1' cr10 = '0' valid data not valid valid data e wait cr8 = '0' cr10 = '1' wait cr8 = '1' cr10 = '1'
read modes m58lt128hst, M58LT128HSB 44/110 7 read modes read operations can be performed in two different ways depending on the settings in the configuration register. if the clock signal is ?don?t care? for the data output, the read operation is asynchronous; if the data output is synchronized with clock, the read operation is synchronous. the read mode and format of the data output are determined by the configuration register. (see section 6: configuration register for details). all banks support both asynchronous and synchronous read operations. 7.1 asynchronous read mode in asynchronous read operations the clock signal is ?don?t care?. the device outputs the data corresponding to the address latched, th at is the memory array, status register, common flash interface or electronic signat ure depending on the command issued. cr15 in the configuration register must be set to ?1? for asynchronous operations. asynchronous read operations can be performed in two different ways, asynchronous random access read and asynchronous page read. only asynchronous page read takes full advantage of the internal page storage so different timings are applied. in asynchronous read mode a page of data is internally read and stored in a page buffer. the page has a size of 4 words and is addressed by address inputs a0 and a1. the first read operation within the page has a longer access time (t avqv , random access time), subsequent reads within the same page have much shorter access times (t avqv1 , page access time). if the page changes then the normal, longer timings apply again. the device features an automatic standby mode. during asynchronous read operations, after a bus inactivity of 150ns, the device automatically switches to the automatic standby mode. in this condition the power consumption is reduced to the standby value and the outputs are still driven. in asynchronous read mode, the wait signal is always de-asserted. see table 22: asynchronous read ac characteristics , figure 9: asynchronous random access read ac waveforms , and figure 10: asynchronous page read ac waveforms for details.
m58lt128hst, M58LT128HSB read modes 45/110 7.2 synchronous burst read mode in synchronous burst read mode the data is output in bursts synchronized with the clock. it is possible to perform burst reads across bank boundaries. synchronous burst read mode can only be used to read the memory array. for other read operations, such as read status register, read cfi and read electronic signature, single synchronous read or asynchronous random access read must be used. in synchronous burst read mode the flow of the data output depends on parameters that are configured in the configuration register. a burst sequence starts at the first clock ed ge (rising or falling dep ending on valid clock edge bit cr6 in the configuration register) afte r the falling edge of latch enable or chip enable, whichever occurs last. addresses are internally incremented and data is output on each data cycle after a delay which depends on the x latency bits cr13-cr11 of the configuration register. the number of words to be output during a synchronous burst read operation can be configured as 4 words, 8 words, 16 words or continuous (burst length bits cr2-cr0). the data can be configured to remain valid for one or two clock cycles (data output configuration bit cr9). the order of the data output can be modified through the wrap burst bit in the configuration register. the burst sequence is sequential and can be confined inside the 4, 8 or 16 word boundary (wrap) or overcome the boundary (no wrap). the wait signal may be asserted to indicate to the system that an ou tput delay will occur. this delay will depend on the starting address of the bu rst sequence and on the burst configuration. wait is asserted during the x latency, the wait state and at the end of a 4, 8 and 16 word burst. it is only de-asserted when output data are valid or when g is at v ih . in continuous burst read mode a wait state will occur when crossing the firs t 16 word boundary. if the starting address is aligned to the burst length (4, 8 or 16 words) the wrapped configuration has no impact on the output sequence. the wait signal can be configured to be active low or active high by setting cr10 in the configuration register. see table 23: synchronous read ac characteristics , and figure 11: synchronous burst read ac waveforms , for details.
read modes m58lt128hst, M58LT128HSB 46/110 7.2.1 synchronous burst read suspend a synchronous burst read operation can be suspended, freeing the data bus for other higher priority devices. it can be suspended during the initial access latency time (before data is output) or after the device has output data. when the synchronous burst read operation is suspended, internal array sensing continues and any previously latched internal data is retained. a burst sequence can be su spended and resumed as often as required as long as the operating conditions of the device are met. a synchronous burst read operation is suspended when chip enable, e , is low and the current address has been latched (on a latch enable rising edge or on a valid clock edge). the clock signal is then halted at v ih or at v il , and output enable, g , goes high. when output enable, g , becomes low again and the clock signal restarts, the synchronous burst read operation is resumed exactly where it stopped. wait will revert to high-imped ance whenever chip enable, e , or output enable, g , goes high. see table 23: synchronous read ac characteristics , and figure 13: synchronous burst read suspend ac waveforms , for details. 7.3 single synchronous read mode single synchronous read operations are sim ilar to synchronous burst read operations except that the memory outputs the same data to the end of the operation. synchronous single reads are used to read the electronic signature, status register, cfi, block protection status, configuration register status or protection register. when the addressed bank is in read cfi, read status register or read electronic signature mode, the wait signal is asserted during the x-latency, the wait state and at the end of a 4, 8 and 16 word burst. it is only de-asserted when output data are valid. see table 23: synchronous read ac characteristics , and figure 12: single synchronous read ac waveforms , for details.
m58lt128hst, M58LT128HSB dual operations and multiple bank architecture 47/110 8 dual operations and multiple bank architecture the multiple bank architecture of the m58lt128hst/b gives greater flexibility for software developers to split the code and data spaces within the memory array. the dual operations feature simplifies the software management of the device by allowing code to be executed from one bank while another bank is being programmed or erased. the dual operations feature means that while programming or erasing in one bank, read operations are possible in another bank with zero latency (only one bank at a time is allowed to be in program or erase mode). if a read operation is required in a bank, which is programming or erasing, the program or erase operation can be suspended. also if the suspended operation was erase then a program command can be issued to another block, so the device can have one block in erase suspend mode, one programming and other banks in read mode. bus read operations are allowed in another bank between setup and confirm cycles of program or erase operations. by using a combination of these features, read operations are possible at any moment in the m58lt128hst/b device. dual operations between the parameter bank and either of the cfi, the otp or the electronic signature memory space are not allowed. ta bl e 1 5 shows which dual operations are allowed or not between the cfi, the otp, the electronic signature locations and the memory array. ta bl e s 13 and 14 show the dual operations possible in other banks and in the same bank. table 13. dual operations allowed in other banks status of bank commands allowed in another bank read array read status register read cfi query read electronic signature program, buffer program block erase program /erase suspend program /erase resume i d l e ye s ye s ye s ye s ye s ye s ye s ye s programming yes yes yes yes ? ? yes ? erasing yes yes yes yes ? ? yes ? program suspended ye s ye s ye s ye s ? ? ? ye s erase suspended ye s ye s ye s ye s ye s ? ? ye s
dual operations and multiple bank architecture m58lt128hst, M58LT128HSB 48/110 table 14. dual operations allowed in same bank status of bank commands allowed in same bank read array read status register read cfi query read electronic signature program, buffer program block erase program /erase suspend program /erase resume i d l e ye s ye s ye s ye s ye s ye s ye s ye s programming ? (1) 1. the read array command is accepted but the data output is not guaranteed until the program or erase has completed. ye s ye s ye s ? ? ye s ? erasing ? (1) ye s ye s ye s ? ? ye s ? program suspended ye s (2) 2. the read array command is accepted but the data output is not guaranteed in the block that is being erased, or in the word that is being programmed. ye s ye s ye s ? ? ? ye s erase suspended ye s (2) ye s ye s ye s ye s (3) 3. not allowed in the block that is being eras ed or in the word that is being programmed. ?? yes table 15. dual operation limitations current status commands allowed read cfi / otp / electronic signature read parameter blocks read main blocks located in parameter bank not located in parameter bank programming / erasing parameter blocks no no no yes programming / erasing main blocks located in parameter bank ye s n o n o ye s not located in parameter bank ye s ye s ye s in different bank only programming otp no no no no
m58lt128hst, M58LT128HSB block protection 49/110 9 block protection the m58lt128hst/b features an instant, individual block protection scheme that allows any block to be protected or unprotected with no latency. this protection scheme has two levels of protection. protect/unprotect - this first level allows software only control of block protection. v pp v pplk - the second level offers a complete hardware protection against program and erase on all blocks. the protection status of each block can be set to protected and unprotected. appendix c , figure 25 , shows a flowchart for the protection operations. 9.1 reading a block?s protection status the protection status of every block can be read in the read electronic signature mode of the device. to enter this mode issue the read electronic signature command. subsequent reads at the address specified in ta bl e 7 , will output the protection status of that block. the protection status is represented by dq0. dq0 indicates the block protect/unprotect status and is set by the protect command and cleared by the unprotect command. the following sections explain the operation of the protection system. 9.2 protected state the default status of all blocks on power-up or after a hardware reset is protected (state = 1). protected blocks are fully protected from program or erase operations. any program or erase operations attempted on a protected block will return an error in the status register. the status of a protected block can be changed to unprotected using the appropriate software commands. an unprotected block can be protected by issuing the protect command. 9.3 unprotected state unprotected blocks (state = 0), can be programmed or erased. all unprotected blocks return to the protected state after a hardware reset or when the device is powered-down. the status of an unprotected block can be changed to protected using the appropriate software commands. a protected block can be unprotected by issuing the unprotect command.
block protection m58lt128hst, M58LT128HSB 50/110 9.4 protection operations during erase suspend changes to block protection status can be performed during an erase suspend by using the standard protection command sequences to unprotect or protect a block. this is useful in the case when another block needs to be updated while an erase operation is in progress. to change block protection during an erase operation, first write the erase suspend command, then check the status register until it indicates that the erase operation has been suspended. next write the desired protect command sequence to a block and the protection status will be changed. after completing any desired protect, read, or program operations, resume the erase operation with the erase resume command. if a block is protected during an erase suspe nd of the same block, the erase operation will complete when the erase is resumed. protection operations cannot be performed during a program suspend.
m58lt128hst, M58LT128HSB program and erase times and endurance cycles 51/110 10 program and erase times and endurance cycles the program and erase times and the number of program/ erase cycles per block are shown in ta b l e 1 6 . exact erase times may change depending on the memory array condition. the best case is when all the bits in the block are at ?0? (pre-programmed). the worst case is when all the bits in the block are at ?1? (not preprogrammed). usually, the system overhead is negligible with respect to the erase time. in the m58lt128hst/b the maximum number of program/erase cycles depends on the v pp voltage supply used. table 16. program/erase times and endurance cycles (1) (2) parameter condition min typ typical after 100kw/e cycles max unit v pp = v dd erase parameter block (16 kword) 0.4 1 2.5 s main block (64 kword) preprogrammed 1.2 3 4 s not preprogrammed 1.5 4 s program (3) single word word program 12 180 s buffer program 12 180 s buffer (32 words) (buffer program) 384 s main block (64 kword) 768 ms suspend latency program 5 10 s erase 5 20 s program/erase cycles (per block) main blocks 100,000 cycles parameter blocks 100,000 cycles
program and erase times and endurance cycles m58lt128hst, M58LT128HSB 52/110 v pp = v pph erase parameter block (16 kword) 0.4 2.5 s main block (64 kword) 1 4 s program (3) single word word program 10 170 s buffer enhanced factory program (4) 2.5 s buffer (32 words) buffer program 80 s buffer enhanced factory program 80 s main block (64 kwords) buffer program 160 ms buffer enhanced factory program 160 ms bank (8 mbits) buffer program 1.28 s buffer enhanced factory program 1.28 s program/erase cycles (per block) main blocks 1000 cycles parameter blocks 2500 cycles blank check main blocks 16 ms parameter blocks 4 ms 1. t a = ?40 to 85c; v dd = 1.7v to 2v; v ddq = 2.7v to 3.6v. 2. values are liable to change with t he external system-level overhead (command sequence and status register polling execution). 3. excludes the time needed to execute the command sequence. 4. this is an average value on the entire device. table 16. program/erase times and endurance cycles (1) (2) (continued) parameter condition min typ typical after 100kw/e cycles max unit
m58lt128hst, M58LT128HSB maximum rating 53/110 11 maximum rating stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. these are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. refer also to the stmicroelectronics sure program and other relevant quality documents. table 17. absolute maximum ratings symbol parameter value unit min max t a ambient operating temperature ?40 85 c t bias temperature under bias ?40 85 c t stg storage temperature ?65 125 c v io input or output voltage ?0.5 3.8 v v dd supply voltage ?0.2 2.5 v v ddq input/output supply voltage ?0.2 4.2 v v pp program voltage ?0.2 10 v i o output short circuit current 100 ma t vpph time for v pp at v pph 100 hours
dc and ac parameters m58lt128hst, M58LT128HSB 54/110 12 dc and ac parameters this section summarizes the operating measurement conditions, and the dc and ac characteristics of the device. the parameters in the dc and ac characteristics tables that follow, are derived from tests performed under the measurement conditions summarized in table 18: operating and ac measurement conditions . designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. figure 7. ac measurement i/o waveform table 18. operating and ac measurement conditions parameter m58lt128hst/b units 85 min max v dd supply voltage 1.7 2.0 v v ddq supply voltage 2.7 3.6 v v pp supply voltage (factory environment) 8.5 9.5 v v pp supply voltage (application environment) ?0.4 v ddq +0.4 v ambient operating temperature ?40 85 c load capacitance (c l )30pf input rise and fall times 5 ns input pulse voltages 0 to v ddq v input and output timing ref. voltages v ddq /2 v ai06161 v ddq 0v v ddq /2
m58lt128hst, M58LT128HSB dc and ac parameters 55/110 figure 8. ac measurement load circuit table 19. capacitance (1) 1. sampled only, not 100% tested. symbol parameter test condition min max unit c in input capacitance v in = 0v 6 8 pf c out output capacitance v out = 0v 8 12 pf ai12842 v ddq c l c l includes jig capacitance 22k ? device under test 0.1f v dd 0.1f v ddq 22k ?
dc and ac parameters m58lt128hst, M58LT128HSB 56/110 table 20. dc characteristics - currents symbol parameter test condition typ max unit i li input leakage current 0v v in v ddq 1 a i lo output leakage current 0v v out v ddq 1 a i dd1 supply current asynchronous read (f=5 mhz) e = v il , g = v ih 14 16 ma supply current synchronous read (f = 40 mhz) 4 word 13 17 ma 8 word 15 19 ma 16 word 17 21 ma continuous 21 26 ma supply current synchronous read (f = 52 mhz) 4 word 16 19 ma 8 word 19 23 ma 16 word 22 26 ma continuous 23 28 ma i dd2 supply current (reset) rp = v ss 0.2v 25 75 a i dd3 supply current (standby) e = v ddq 0.2v k=v ss 25 75 a i dd4 supply current (automatic standby) e = v il , g = v ih 25 75 a i dd5 (1) 1. sampled only, not 100% tested. supply current (program) v pp = v pph 820ma v pp = v dd 10 25 ma supply current (erase) v pp = v pph 820ma v pp = v dd 10 25 ma i dd6 (1),(2) 2. v dd dual operation current is the sum of read and program or erase currents. supply current (dual operations) program/erase in one bank, asynchronous read in another bank 24 41 ma program/erase in one bank, synchronous read (continuous f=52 mhz) in another bank 33 53 ma i dd7 (1) supply current program/ erase suspended (standby) e = v ddq 0.2v k=v ss 25 75 a i pp1 (1) v pp supply current (program) v pp = v pph 25ma v pp = v dd 0.2 5 a v pp supply current (erase) v pp = v pph 25ma v pp = v dd 0.2 5 a i pp2 v pp supply current (read) v pp v dd 0.2 5 a i pp3 (1) v pp supply current (standby) v pp v dd 0.2 5 a
m58lt128hst, M58LT128HSB dc and ac parameters 57/110 table 21. dc characteristics - voltages symbol parameter test condition min typ max unit v il input low voltage 0 0.4 v v ih input high voltage v ddq ?0.4 v ddq + 0.4 v v ol output low voltage i ol = 100a 0.1 v v oh output high voltage i oh = ?100a v ddq ?0.1 v v pp1 v pp program voltage-logic program, erase 1.3 3 3.6 v v pph v pp program voltage factory program, erase 8.5 9.0 9.5 v v pplk program or erase lockout 0.4 v v lko v dd lock voltage 1 v
dc and ac parameters m58lt128hst, M58LT128HSB 58/110 figure 9. asynchronous random access read ac waveforms ai09817 tavav telqx tehqx tglqv tglqx tghqx dq0-dq15 e g telqv tehqz tghqz valid a0-a22 valid valid l (2) tellh tllqv tlllh tavlh tlhax taxqx wait (1) teltv tehtz hi-z hi-z tavqv tgltv tghtz notes: 1. write enable, w, is high, wait is active low. 2. latch enable, l, can be kept low (also at board level) when the latch enable function is not required or supporte d.
m58lt128hst, M58LT128HSB dc and ac parameters 59/110 figure 10. asynchronous page read ac waveforms 1. wait is active low. ai13570b a2-a22 e g a0-a1 valid add. l dq0-dq15 valid add. valid add. valid address valid address valid data tlhax tavlh tllqv tavqv1 tglqx tlllh tellh wait tavav telqv telqx teltv tglqv (1) valid address latch outputs enabled valid data standby hi-z tgltv valid data valid data valid data
dc and ac parameters m58lt128hst, M58LT128HSB 60/110 table 22. asynchronous read ac characteristics symbol alt parameter m58lt128hst/b unit 85 read timings t avav t rc address valid to next address valid min 85 ns t avqv t acc address valid to output valid (random) max 85 ns t avqv1 t pag e address valid to output valid (page) max 25 ns t axqx (1) 1. sampled only, not 100% tested. t oh address transition to output transition min 0 ns t eltv chip enable low to wait valid max 17 ns t elqv (2) 2. g may be delayed by up to t elqv - t glqv after the falling edge of e without increasing t elqv . t ce chip enable low to output valid max 85 ns t elqx (1) t lz chip enable low to output transition min 0 ns t ehtz chip enable high to wait hi-z max 17 ns t ehqx (1) t oh chip enable high to output transition min 0 ns t ehqz (1) t hz chip enable high to output hi-z max 17 ns t glqv (2) t oe output enable low to output valid max 25 ns t glqx (1) t olz output enable low to output transition min 0 ns t gltv output enable low to wait valid max 17 ns t ghqx (1) t oh output enable high to output transition min 0 ns t ghqz (1) t df output enable high to output hi-z max 17 ns t ghtz output enable high to wait hi-z max 17 ns latch timings t avlh t avadvh address valid to latch enable high min 10 ns t ellh t eladvh chip enable low to latch enable high min 10 ns t lhax t advhax latch enable high to address transition min 9 ns t lllh t advladvh latch enable pulse width min 10 ns t llqv t advlqv latch enable low to output valid (random) max 85 ns
m58lt128hst, M58LT128HSB dc and ac parameters 61/110 figure 11. synchronous burst read ac waveforms ai09819b dq0-dq15 e g a0-a22 l wait k (4) valid valid valid address tlllh tavlh tglqx tavkh tllkh telkh tkhax tkhqx tkhqv not valid valid note 1 note 2 note 2 tkhtx tehqx tehqz tghqx tghqz hi-z valid note 2 teltv tkhtv tehtz address latch x latency valid data flow boundary crossing valid data standby note 1. the number of clock cycles to be inserted depends on the x latency set in the burst configuration register. 2. the wait signal can be configured to be active during wait state or one cycle before. wait signal is active low. 3. address latched and data output on the rising clock edge. 4. either the rising or the falling edge of the clock signal, k, can be configured as the active edge. here, the activ e edge of k is the rising one. tehel hi-z tgltv
dc and ac parameters m58lt128hst, M58LT128HSB 62/110 figure 12. single synchronous read ac waveforms 1. the wait signal is configured to be active dur ing wait state. wait signal is active low. 2. address latched and data output on the rising clock edge. either the rising or the falling edge of the clock signal, k, can be configured as the active edge. here, the active edge is the rising one. ai12359 e g a0-a22 l wait (1,2) k (2) valid address tglqv tavkh tllkh telkh hi-z telqx tkhqv tglqx tkhtv dq0-dq15 valid hi-z telqv tgltv tghtz
m58lt128hst, M58LT128HSB dc and ac parameters 63/110 figure 13. synchronous burst read suspend ac waveforms ai12366b dq0-dq15 e g a0-a22 l wait (2) k (4) valid valid valid address tlllh tavlh tavkh tllkh telkh tkhax valid valid note 1 tehqx tehqz tghqx hi-z teltv tkhqv tehtz notes 1. the number of clock cycles to be inserted depends on the x latency set in the configuration register. 2. the wait signal is configured to be active during wait state. wait signal is active low. 3. the clock signal can be held high or low 4. address latched and data output on the rising clock edge. either the rising or the falling edge of the clock sign al, k, can be configured as the active edge. here, the active edge is the rising one. tglqx tehel tghqz tglqv note 3 hi-z tgltv tghtz
dc and ac parameters m58lt128hst, M58LT128HSB 64/110 figure 14. clock input ac waveform table 23. synchronous read ac characteristics (1) (2) 1. sampled only, not 100% tested. 2. for other timings please refer to table 22: asynchronous r ead ac characteristics . symbol alt parameter m58lt128hst/b unit 85 synchronous read timings t avkh t avclkh address valid to clock high min 9 ns t elkh t elclkh chip enable low to clock high min 9 ns t eltv chip enable low to wait valid max 17 ns t ehel chip enable pulse width (subsequent synchronous reads) min 20 ns t ehtz chip enable high to wait hi-z max 17 ns t khax t clkhax clock high to address transition min 10 ns t khqv t khtv t clkhqv clock high to output valid clock high to wait valid max 17 ns t khqx t khtx t clkhqx clock high to output transition clock high to wait transition min 3 ns t llkh t advlclkh latch enable low to clock high min 9 ns clock specifications t khkh t clk clock period (f=52 mhz) min 19 ns t khkl t klkh clock high to clock low clock low to clock high min 6 ns t f t r clock fall or rise time max 2 ns ai06981 tkhkh tf tr tkhkl tklkh
m58lt128hst, M58LT128HSB dc and ac parameters 65/110 figure 15. write ac waveforms , write enable controlled e g w dq0-dq15 command cmd or data status register v pp valid address a0-a22 tavav tqvvpl tavwh twhax program or erase telwl twheh twhdx tdvwh twlwh twhwl tvphwh set-up command confirm command or data input status register read 1st polling telqv ai12889 twhgl twhel bank address valid address l tavlh tlllh tellh tlhax tghwl twhvpl telkv k twhll twhav
dc and ac parameters m58lt128hst, M58LT128HSB 66/110 table 24. write ac characteristics, write enable controlled (1) 1. sampled only, not 100% tested. symbol alt parameter m58lt128hst/b unit 85 write enable controlled timings t avav t wc address valid to next address valid min 85 ns t avlh address valid to latch enable high min 10 ns t avwh (2) address valid to write enable high min 50 ns t dvwh t ds data valid to write enable high min 50 ns t ellh chip enable low to latch enable high min 10 ns t elwl t cs chip enable low to write enable low min 0 ns t elqv chip enable low to output valid min 85 ns t elkv chip enable low to clock valid min 9 ns t ghwl output enable high to write enable low min 17 ns t lhax latch enable high to address transition min 9 ns t lllh latch enable pulse width min 10 ns t whav (2) 2. meaningful only if l is always kept low. write enable high to address valid min 0 ns t whax (2) t ah write enable high to address transition min 0 ns t whdx t dh write enable high to input transition min 0 ns t wheh t ch write enable high to chip enable high min 0 ns t whel (3) 3. t whel and t whll have this value when reading in the target ed bank or when reading following a set configuration register command. system designers should take this into account and may insert a software no-op instruction to delay the first read in the same bank a fter issuing any command and to delay the first read to any address after issuing a set confi guration register command. if the first read after the command is a read array operation in a different bank and no changes to the configuration register have been issued, t whel and t whll are 0ns. write enable high to chip enable low min 25 ns t whgl write enable high to output enable low min 0 ns t whll (3) write enable high to latch enable low min 25 ns t whwl t wph write enable high to write enable low min 25 ns t wlwh t wp write enable low to write enable high min 50 ns protection timings t qvvpl output (status register) valid to v pp low min 0 ns t vphwh t vps v pp high to write enable high min 200 ns t whvpl write enable high to v pp low min 200 ns
m58lt128hst, M58LT128HSB dc and ac parameters 67/110 figure 16. write ac waveforms, chip enable controlled w g e dq0-dq15 command cmd or data status register v pp valid address a0-a22 tavav tqvvpl taveh tehax program or erase twlel tehwh tehdx tdveh teleh tehel tvpheh set-up command confirm command or data input status register read 1st polling telqv ai12890 tehgl twhel bank address valid address l tavlh tlllh tlhax tghel tehvpl telkv k tellh
dc and ac parameters m58lt128hst, M58LT128HSB 68/110 table 25. write ac characteristics, chip enable controlled (1) 1. sampled only, not 100% tested. symbol alt parameter m58lt128hst/b unit 85 chip enable controlled timings t avav t wc address valid to next address valid min 85 ns t aveh address valid to chip enable high min 50 ns t avlh address valid to latch enable high min 10 ns t dveh t ds data valid to chip enable high min 50 ns t ehax t ah chip enable high to address transition min 0 ns t ehdx t dh chip enable high to input transition min 0 ns t ehel t cph chip enable high to chip enable low min 25 ns t ehgl chip enable high to output enable low min 0 ns t ehwh t ch chip enable high to write enable high min 0 ns t elkv chip enable low to clock valid min 9 ns t eleh t cp chip enable low to chip enable high min 50 ns t ellh chip enable low to latch enable high min 10 ns t elqv chip enable low to output valid min 85 ns t ghel output enable high to chip enable low min 17 ns t lhax latch enable high to address transition min 9 ns t lllh latch enable pulse width min 10 ns t whel (2) 2. t whel has this value when reading in the targeted bank or when reading following a set configuration register command. system designer s should take this into account and may insert a software no-op instruction to delay the first read in the same bank a fter issuing any command and to delay the first read to any address after issuing a set conf iguration register command. if the first read after the command is a read array operation in a different bank and no changes to the configuration register have been issued, t whel is 0ns. write enable high to chip enable low min 25 ns t wlel t cs write enable low to chip enable low min 0 ns protection timings t ehvpl chip enable high to v pp low min 200 ns t qvvpl output (status register) valid to v pp low min 0 ns t vpheh t vps v pp high to chip enable high min 200 ns
m58lt128hst, M58LT128HSB dc and ac parameters 69/110 figure 17. reset and power-up ac waveforms ai06976 w, rp e, g, vdd, vddq tvdhph tplph power-up reset tplwl tplel tplgl tplll l tphwl tphel tphgl tphll table 26. reset and power-up ac characteristics symbol parameter test condition 85 unit t plwl t plel t plgl t plll reset low to write enable low, chip enable low, output enable low, latch enable low during program min 25 s during erase min 25 s read min 80 ns other conditions min 20 s t phwl t phel t phgl t phll reset high to write enable low chip enable low output enable low latch enable low min 30 ns t plph (1),(2) rp pulse width min 50 ns t vdhph (3) supply voltages high to reset high min 150 s 1. the device reset is possible but not guaranteed if t plph < 50ns. 2. sampled only, not 100% tested. 3. it is important to assert rp in order to allow proper cpu initialization during power-up or reset.
package mechanical m58lt128hst, M58LT128HSB 70/110 13 package mechanical in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second-level interconnect. the category of second-level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com . figure 18. tbga64 10 13 mm - 8 8 active ball array, 1 mm pitch, bottom view package outline 1. drawing is not to scale. e1 e d1 d eb sd se a2 a1 a bga-z23 ddd fd fe ball "a1"
m58lt128hst, M58LT128HSB package mechanical 71/110 table 27. tbga64 10 13 mm - 8 8 active ball array, 1 mm pitch, package mechanical data symbol millimeters inches typ min max typ min max a 1.200 0.0472 a1 0.300 0.200 0.350 0.0118 0.0079 0.0138 a2 0.800 0.0315 b 0.350 0.500 0.0138 0.0197 d 10.000 9.900 10.100 0.3937 0.3898 0.3976 d1 7.000 ? ? 0.2756 ? ? ddd 0.100 0.0039 e 1.000 ? ? 0.0394 ? ? e 13.000 12.900 13.100 0.5118 0.5079 0.5157 e1 7.000 ? ? 0.2756 ? ? fd 1.500 ? ? 0.0591 ? ? fe 3.000 ? ? 0.1181 ? ? sd 0.500 ? ? 0.0197 ? ? se 0.500 ? ? 0.0197 ? ?
part numbering m58lt128hst, M58LT128HSB 72/110 14 part numbering devices are shipped from the factory with the memory content bits erased to ?1?. for a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the st sales office nearest to you. table 28. ordering information scheme example: m58lt128hst 8 za 6 e device type m58 architecture l = multilevel, multiple bank, burst mode operating voltage t = v dd = 1.7 v to 2.0 v, v ddq = 2.7 v to 3.6 v density 128 = 128 mbit (x16) technology h = 90nm technology security s = secure parameter location t = top boot b = bottom boot speed 8 = 85 ns package za = tbga64, 10 13 mm, 1 mm pitch temperature range 6 = ?40 to 85c packing option e = ecopack? package, standard packing f = ecopack? package, tape & reel packing
m58lt128hst, M58LT128HSB block address tables 73/110 appendix a block address tables table 29. top boot block addresses, m58lt128hst bank (1) # size (kword) address range parameter bank 0 16 7fc000-7fffff 1 16 7f8000-7fbfff 2 16 7f4000-7f7fff 3 16 7f0000-7f3fff 4 64 7e0000-7effff 5 64 7d0000-7dffff 6 64 7c0000-7cffff 7 64 7b0000-7bffff 8 64 7a0000-7affff 9 64 790000-79ffff 10 64 780000-78ffff bank 1 11 64 770000-77ffff 12 64 760000-76ffff 13 64 750000-75ffff 14 64 740000-74ffff 15 64 730000-73ffff 16 64 720000-72ffff 17 64 710000-71ffff 18 64 700000-70ffff bank 2 19 64 6f0000-6fffff 20 64 6e0000-6effff 21 64 6d0000-6dffff 22 64 6c0000-6cffff 23 64 6b0000-6bffff 24 64 6a0000-6affff 25 64 690000-69ffff 26 64 680000-68ffff bank 3 27 64 670000-67ffff 28 64 660000-66ffff 29 64 650000-65ffff 30 64 640000-64ffff 31 64 630000-63ffff 32 64 620000-62ffff 33 64 610000-61ffff 34 64 600000-60ffff
block address tables m58lt128hst, M58LT128HSB 74/110 bank 4 35 64 5f0000-5fffff 36 64 5e0000-5effff 37 64 5d0000-5dffff 38 64 5c0000-5cffff 39 64 5b0000-5bffff 40 64 5a0000-5affff 41 64 590000-59ffff 42 64 580000-58ffff bank 5 43 64 570000-57ffff 44 64 560000-56ffff 45 64 550000-55ffff 46 64 540000-54ffff 47 64 530000-53ffff 48 64 520000-52ffff 49 64 510000-51ffff 50 64 500000-50ffff bank 6 51 64 4f0000-4fffff 52 64 4e0000-4effff 53 64 4d0000-4dffff 54 64 4c0000-4cffff 55 64 4b0000-4bffff 56 64 4a0000-4affff 57 64 490000-49ffff 58 64 480000-48ffff bank 7 59 64 470000-47ffff 60 64 460000-46ffff 61 64 450000-45ffff 62 64 440000-44ffff 63 64 430000-43ffff 64 64 420000-42ffff 65 64 410000-41ffff 66 64 400000-40ffff table 29. top boot block addresses, m58lt128hst (continued) bank (1) # size (kword) address range
m58lt128hst, M58LT128HSB block address tables 75/110 bank 8 67 64 3f0000-3fffff 68 64 3e0000-3effff 69 64 3d0000-3dffff 70 64 3c0000-3cffff 71 64 3b0000-3bffff 72 64 3a0000-3affff 73 64 390000-39ffff 74 64 380000-38ffff bank 9 75 64 370000-37ffff 76 64 360000-36ffff 77 64 350000-35ffff 78 64 340000-34ffff 79 64 330000-33ffff 80 64 320000-32ffff 81 64 310000-31ffff 82 64 300000-30ffff bank 10 83 64 2f0000-2fffff 84 64 2e0000-2effff 85 64 2d0000-2dffff 86 64 2c0000-2cffff 87 64 2b0000-2bffff 88 64 2a0000-2affff 89 64 290000-29ffff 90 64 280000-28ffff bank 11 91 64 270000-27ffff 92 64 260000-26ffff 93 64 250000-25ffff 94 64 240000-24ffff 95 64 230000-23ffff 96 64 220000-22ffff 97 64 210000-21ffff 98 64 200000-20ffff table 29. top boot block addresses, m58lt128hst (continued) bank (1) # size (kword) address range
block address tables m58lt128hst, M58LT128HSB 76/110 bank 12 99 64 1f0000-1fffff 100 64 1e0000-1effff 101 64 1d0000-1dffff 102 64 1c0000-1cffff 103 64 1b0000-1bffff 104 64 1a0000-1affff 105 64 190000-19ffff 106 64 180000-18ffff bank 13 107 64 170000-17ffff 108 64 160000-16ffff 109 64 150000-15ffff 110 64 140000-14ffff 111 64 130000-13ffff 112 64 120000-12ffff 113 64 110000-11ffff 114 64 100000-10ffff bank 14 115 64 0f0000-0fffff 116 64 0e0000-0effff 117 64 0d0000-0dffff 118 64 0c0000-0cffff 119 64 0b0000-0bffff 120 64 0a0000-0affff 121 64 090000-09ffff 122 64 080000-08ffff bank 15 123 64 070000-07ffff 124 64 060000-06ffff 125 64 050000-05ffff 126 64 040000-04ffff 127 64 030000-03ffff 128 64 020000-02ffff 129 64 010000-01ffff 130 64 000000-00ffff 1. there are two bank regions: bank region 1 contains all the banks that are made up of main blocks only; bank region 2 contains the banks that are made up of the parameter and main blocks (parameter bank). table 29. top boot block addresses, m58lt128hst (continued) bank (1) # size (kword) address range
m58lt128hst, M58LT128HSB block address tables 77/110 table 30. bottom boot block addresses, M58LT128HSB bank (1) # size (kword) address range bank 15 130 64 7f0000-7fffff 129 64 7e0000-7effff 128 64 7d0000-7dffff 127 64 7c0000-7cffff 126 64 7b0000-7bffff 125 64 7a0000-7affff 124 64 790000-79ffff 123 64 780000-78ffff bank 14 122 64 770000-77ffff 121 64 760000-76ffff 120 64 750000-75ffff 119 64 740000-74ffff 118 64 730000-73ffff 117 64 720000-72ffff 116 64 710000-71ffff 115 64 700000-70ffff bank 13 114 64 6f0000-6fffff 113 64 6e0000-6effff 112 64 6d0000-6dffff 111 64 6c0000-6cffff 110 64 6b0000-6bffff 109 64 6a0000-6affff 108 64 690000-69ffff 107 64 680000-68ffff bank 12 106 64 670000-67ffff 105 64 660000-66ffff 104 64 650000-65ffff 103 64 640000-64ffff 102 64 630000-63ffff 101 64 620000-62ffff 100 64 610000-61ffff 99 64 600000-60ffff
block address tables m58lt128hst, M58LT128HSB 78/110 bank 11 98 64 5f0000-5fffff 97 64 5e0000-5effff 96 64 5d0000-5dffff 95 64 5c0000-5cffff 94 64 5b0000-5bffff 93 64 5a0000-5affff 92 64 590000-59ffff 91 64 580000-58ffff bank 10 90 64 570000-57ffff 89 64 560000-56ffff 88 64 550000-55ffff 87 64 540000-54ffff 86 64 530000-53ffff 85 64 520000-52ffff 84 64 510000-51ffff 83 64 500000-50ffff bank 9 82 64 4f0000-4fffff 81 64 4e0000-4effff 80 64 4d0000-4dffff 79 64 4c0000-4cffff 78 64 4b0000-4bffff 77 64 4a0000-4affff 76 64 490000-49ffff 75 64 480000-48ffff bank 8 74 64 470000-47ffff 73 64 460000-46ffff 72 64 450000-45ffff 71 64 440000-44ffff 70 64 430000-43ffff 69 64 420000-42ffff 68 64 410000-41ffff 67 64 400000-40ffff table 30. bottom boot block addresses, M58LT128HSB (continued) bank (1) # size (kword) address range
m58lt128hst, M58LT128HSB block address tables 79/110 bank 7 66 64 3f0000-3fffff 65 64 3e0000-3effff 64 64 3d0000-3dffff 63 64 3c0000-3cffff 62 64 3b0000-3bffff 61 64 3a0000-3affff 60 64 390000-39ffff 59 64 380000-38ffff bank 6 58 64 370000-37ffff 57 64 360000-36ffff 56 64 350000-35ffff 55 64 340000-34ffff 54 64 330000-33ffff 53 64 320000-32ffff 52 64 310000-31ffff 51 64 300000-30ffff bank 5 50 64 2f0000-2fffff 49 64 2e0000-2effff 48 64 2d0000-2dffff 47 64 2c0000-2cffff 46 64 2b0000-2bffff 45 64 2a0000-2affff 44 64 290000-29ffff 43 64 280000-28ffff bank 4 42 64 270000-27ffff 41 64 260000-26ffff 40 64 250000-25ffff 39 64 240000-24ffff 38 64 230000-23ffff 37 64 220000-22ffff 36 64 210000-21ffff 35 64 200000-20ffff table 30. bottom boot block addresses, M58LT128HSB (continued) bank (1) # size (kword) address range
block address tables m58lt128hst, M58LT128HSB 80/110 bank 3 34 64 1f0000-1fffff 33 64 1e0000-1effff 32 64 1d0000-1dffff 31 64 1c0000-1cffff 30 64 1b0000-1bffff 29 64 1a0000-1affff 28 64 190000-19ffff 27 64 180000-18ffff bank 2 26 64 170000-17ffff 25 64 160000-16ffff 24 64 150000-15ffff 23 64 140000-14ffff 22 64 130000-13ffff 21 64 120000-12ffff 20 64 110000-11ffff 19 64 1f0000-1fffff bank 1 18 64 0f0000-0fffff 17 64 0e0000-0effff 16 64 0d0000-0dffff 15 64 0c0000-0cffff 14 64 0b0000-0bffff 13 64 0a0000-0affff 12 64 090000-09ffff 11 64 080000-08ffff parameter bank 10 64 070000-07ffff 9 64 060000-06ffff 8 64 050000-05ffff 7 64 040000-04ffff 6 64 030000-03ffff 5 64 020000-02ffff 4 64 010000-01ffff 3 16 00c000-00ffff 2 16 008000-00bfff 1 16 004000-007fff 0 16 000000-003fff 1. there are two bank regions: bank region 2 contains all the banks that are made up of main blocks only; bank region 1 contains the banks that are made up of the parameter and main blocks (parameter bank). table 30. bottom boot block addresses, M58LT128HSB (continued) bank (1) # size (kword) address range
m58lt128hst, M58LT128HSB common flash interface 81/110 appendix b common flash interface the common flash interface is a jedec approved, standardized data structure that can be read from the flash memory device. it allows a system software to query the device to determine various electrical and timing pa rameters, density information and functions supported by the memory. the system can interface easily with the device, enabling the software to upgrade itself when necessary. when the read cfi query command is issued the device enters cfi query mode and the data structure is read from the memory. tables 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 and 40 show the addresses used to retrieve the data. the query data is always presented on the lowest order data outputs (dq0-dq7), the other outputs (dq8-dq15) are set to 0. the cfi data structure also contains a security area where a 64 bit unique security number is written (see figure 4: protection register memory map ). this area can be accessed only in read mode by the final user. it is impossible to change the security number after it has been written by st. issue a read array command to return to read mode. 1. the flash memory display the cfi data structure w hen cfi query command is issued. in this table are listed the main sub-sections detailed in tables 32 , 33 , 34 and 35 . query data is always presented on the lowest order data outputs. table 31. query structure overview offset sub-section name description 000h reserved reserved for algorithm-specific information 010h cfi query identification string comm and set id and algorithm data offset 01bh system interface information d evice timing & voltage information 027h device geometry definition flash device layout p primary algorithm-specific extended query table additional information specific to the primary algorithm (optional) a alternate algorithm-specific extended query table additional information specific to the alternate algorithm (optional) 080h security code area lock protection register unique device number and user programmable otp
common flash interface m58lt128hst, M58LT128HSB 82/110 table 32. cfi query identification string offset sub-section name description value 000h 0020h manufacturer code st 001h 88d6h 88d7h device code m58lt128hst M58LT128HSB to p bottom 002h-00fh reserved reserved 010h 0051h query unique ascii string "qry" "q" 011h 0052h "r" 012h 0059h "y" 013h 0001h primary algorithm command set and control interface id code 16 bit id code defining a specific algorithm 014h 0000h 015h offset = p = 000ah address for primary algorithm extended query table (see ta b l e 3 5 ) p = 10ah 016h 0001h 017h 0000h alternate vendor command set and control interface id code second vendor - specified algorithm supported na 018h 0000h 019h value = a = 0000h address for alternate algorithm extended query table na 01ah 0000h
m58lt128hst, M58LT128HSB common flash interface 83/110 table 33. cfi query system interface information offset data description value 01bh 0017h v dd logic supply minimum program/erase or write voltage bit 7 to 4 bcd value in volts bit 3 to 0 bcd value in 100 millivolts 1.7v 01ch 0020h v dd logic supply maximum program/erase or write voltage bit 7 to 4 bcd value in volts bit 3 to 0 bcd value in 100 millivolts 2v 01dh 0085h v pp [programming] supply minimum program/erase voltage bit 7 to 4 hex value in volts bit 3 to 0 bcd value in 100 millivolts 8.5v 01eh 0095h v pp [programming] supply maximum program/erase voltage bit 7 to 4 hex value in volts bit 3 to 0 bcd value in 100 millivolts 9.5v 01fh 0004h typical time-out per single byte/word program = 2 n s 16s 020h 0009h typical time-out for buffer program = 2 n s 512s 021h 000ah typical time-out per individual block erase = 2 n ms 1s 022h 0000h typical time-out for full chip erase = 2 n ms na 023h 0004h maximum time-out for word program = 2 n times typical 256s 024h 0004h maximum time-out for buffer program = 2 n times typical 8192s 025h 0002h maximum time-out per individual block erase = 2 n times typical 4s 026h 0000h maximum time-out for chip erase = 2 n times typical na
common flash interface m58lt128hst, M58LT128HSB 84/110 table 34. device geometry definition offset data description value 027h 0018h device size = 2 n in number of bytes 16 mbytes 028h 029h 0001h 0000h flash device interface code description x16 async. 02ah 02bh 0006h 0000h maximum number of bytes in multi-byte program or page = 2 n 64 bytes 02ch 0002h number of identical sized erase block regions within the device bit 7 to 0 = x = number of erase block regions 2 top devices 02dh 02eh 007eh 0000h erase block region 1 information number of identical-size erase blocks = 007eh+1 127 02fh 030h 0000h 0002h erase block region 1 information block size in region 1 = 0200h * 256 byte 128 kbyte 031h 032h 0003h 0000h erase block region 2 information number of identical-size erase blocks = 0003h+1 4 033h 034h 0080h 0000h erase block region 2 information block size in region 2 = 0080h * 256 byte 32 kbyte 035h 038h reserved reserved for future erase block region information na bottom devices 02dh 02eh 0003h 0000h erase block region 1 information number of identical-size erase block = 0003h+1 4 02fh 030h 0080h 0000h erase block region 1 information block size in region 1 = 0080h * 256 bytes 32 kbytes 031h 032h 007eh 0000h erase block region 2 information number of identical-size erase block = 007eh+1 127 033h 034h 0000h 0002h erase block region 2 information block size in region 2 = 0200h * 256 bytes 128 kbytes 035h 038h reserved reserved for future erase block region information na
m58lt128hst, M58LT128HSB common flash interface 85/110 table 35. primary algorithm-specific extended query table offset data description value (p)h = 10ah 0050h primary algorithm extended query table unique ascii string ?pri? "p" 0052h "r" 0049h "i" (p+3)h =10dh 0031h major version number, ascii "1" (p+4)h = 10eh 0033h minor version number, ascii "3" (p+5)h = 10fh 00e6h extended query table contents for primary algorithm. address (p+5)h contains less significant byte. bit 0 chip erase supported(1 = yes, 0 = no) bit 1 erase suspend supported(1 = yes, 0 = no) bit 2 program suspend supported(1 = yes, 0 = no) bit 3 legacy protect/unprotect supported(1 = yes, 0 = no) bit 4 queued erase supported(1 = yes, 0 = no) bit 5 instant individual block protection supported(1 = yes, 0 = no) bit 6 protection bits supported(1 = yes, 0 = no) bit 7 page mode read supported(1 = yes, 0 = no) bit 8 synchronous read supported(1 = yes, 0 = no) bit 9 simultaneous operation supported(1 = yes, 0 = no) bit 10 to 31 reserved; undefined bits are ?0?. if bit 31 is ?1? then another 31 bit field of optional feat ures follows at the end of the bit-30 field. no ye s ye s no no ye s ye s ye s ye s ye s 0003h (p+7)h = 111h 0000h (p+8)h = 112h 0000h (p+9)h = 113h 0001h supported functions after suspend read array, read status register and cfi query bit 0 program supported after erase suspend (1 = yes, 0 = no) bit 7 to 1 reserved; undefined bits are ?0? ye s (p+a)h = 114h 0003h block protect status defines which bits in the block status register section of the query are implemented. bit 0 block protect status register protect/unprotect bit active (1 = yes, 0 = no) bit 1 block protection status register lock-down bit active (1 = yes, 0 = no) bit 15 to 2 reserved for future use; undefined bits are ?0? ye s no (p+b)h = 115h 0000h (p+c)h = 116h 0018h v dd logic supply optimum program/erase voltage (highest performance) bit 7 to 4 hex value in volts bit 3 to 0 bcd value in 100 mv 1.8v (p+d)h = 117h 0090h v pp supply optimum program/erase voltage bit 7 to 4 hex value in volts bit 3 to 0 bcd value in 100 mv 9v
common flash interface m58lt128hst, M58LT128HSB 86/110 table 36. protection register information offset data description value (p+e)h = 118h 0002h number of protection register fields in jedec id space. 0000h indicates that 256 fields are available. 2 (p+f)h = 119h 0080h protection field 1: protection description bits 0-7 lower byte of protection register address bits 8-15 upper byte of protection register address bits 16-23 2 n bytes in factory pre-programmed region bits 24-31 2 n bytes in user programmable region 80h (p+10)h = 11ah 0000h 00h (p+ 11)h = 11bh 0003h 8 bytes (p+12)h = 11ch 0003h 8 bytes (p+13)h = 11dh 0089h protection register 2: protection description bits 0-31 protection register address bits 32-39 n number of factory programmed regions (lower byte) bits 40-47 n number of factory programmed regions (upper byte) bits 48-55 2 n bytes in factory programmable region bits 56-63 n number of user programmable regions (lower byte) bits 64-71 n number of user programmable regions (upper byte) bits 72-79 2 n bytes in user programmable region 89h (p+14)h = 11eh 0000h 00h (p+15)h = 11fh 0000h 00h (p+16)h = 120h 0000h 00h (p+17)h = 121h 0000h 0 (p+18)h = 122h 0000h 0 (p+19)h = 123h 0000h 0 (p+1a)h = 124h 0010h 16 (p+1b)h = 125h 0000h 0 (p+1c)h = 126h 0004h 16 table 37. burst read information offset data desc ription value (p+1d)h = 127h 0003h page-mode read capability bits 0-7 n? such that 2 n hex value represents the number of read-page bytes. see offset 0028h for device word width to determine page-mode data output width. 8 bytes (p+1e)h = 128h 0004h number of synchronous mode read configuration fields that follow. 4 (p+1f)h = 129h 0001h synchronous mode read capability configuration 1 bit 3-7 reserved bit 0-2 n? such that 2 n+1 hex value represents the maximum number of continuous synchronous reads when the device is configured for its maximum word width. a value of 07h indicates that the device is capable of continuous linear bursts that will output data until the internal burst counter reaches the end of the device?s burstable address space. this field?s 3-bit value can be written directly to the read configuration register bit 0-2 if the device is configured for its maximum word width. see offset 0028h for word width to determine the burst data output width. 4 (p+20)h = 12ah 0002h synchronous mode read capability configuration 2 8 (p-21)h = 12bh (p+22)h = 12ch 0003h 0007h synchronous mode read ca pability configuration 3 16 synchronous mode read ca pability configuration 4 cont.
m58lt128hst, M58LT128HSB common flash interface 87/110 table 38. bank and erase block region information (1) (2) 1. the variable p is a pointer which is defined at cfi offset 015h. 2. bank regions. there ar e two bank regions, see table 29 and table 30 . flash memory (top) flash memory (bottom) description offset data offset data (p+23)h = 12dh 02h (p+23)h = 12dh 02h number of bank regions within the device table 39. bank and erase block region 1 information m58lt128hst (top) M58LT128HSB (bottom) description offset data offset data (p+24)h = 12eh 0fh (p+24)h = 12eh 01h number of identical banks within bank region 1 (p+25)h = 12fh 00h (p+25)h = 12fh 00h (p+26)h = 130h 11h (p+26)h = 130h 11h number of program or erase operations allowed in bank region 1: bits 0-3: number of simultaneous program operations bits 4-7: number of simultaneous erase operations (p+27)h = 131h 00h (p+27)h = 131h 00h number of program or erase operations allowed in other banks while a bank in same region is programming bits 0-3: number of simultaneous program operations bits 4-7: number of simultaneous erase operations (p+28)h = 132h 00h (p+28)h = 132h 00h number of program or erase operations allowed in other banks while a bank in this region is erasing bits 0-3: number of simultaneous program operations bits 4-7: number of simultaneous erase operations (p+29)h = 133h 01h (p+29)h = 133h 02h types of erase block regions in bank region 1 n = number of erase block regions with contiguous same-size erase blocks. symmetrically blocked banks have one blocking region (2) . (p+2a)h = 134h 07h (p+2a)h = 134h 03h bank region 1 erase block type 1 information bits 0-15: n+1 = number of identical-sized erase blocks bits 16-31: n256 = number of bytes in erase block region (p+2b)h = 135h 00h (p+2b)h = 135h 00h (p+2c)h = 136h 00h (p+2c)h = 136h 80h (p+2d)h = 137h 02h (p+2d)h = 137h 00h (p+2e)h = 138h 64h (p+2e)h = 138h 64h bank region 1 (erase block type 1) minimum block erase cycles 1000 (p+2f)h = 139h 00h (p+2f)h = 139h 00h
common flash interface m58lt128hst, M58LT128HSB 88/110 1. the variable p is a pointer which is defined at cfi offset 015h. 2. bank regions. there ar e two bank regions, see table 29 to table 30 . (p+30)h = 13ah 01h (p+30)h = 13ah 01h bank region 1 (erase block type 1): bits per cell, internal ecc bits 0-3: bits per cell in erase region bit 4: reserved for ?internal ecc used? bits 5-7: reserved (p+31)h = 13bh 03h (p+31)h = 13bh 03h bank region 1 (erase block type 1): page mode and synchronous mode capabilities bit 0: page-mode reads permitted bit 1: synchronous reads permitted bit 2: synchronous writes permitted bits 3-7: reserved (p+32)h = 13ch 06h bank region 1 erase block type 2 information bits 0-15: n+1 = number of identical-sized erase blocks bits 16-31: n256 = number of bytes in erase block region (p+33)h = 13dh 00h (p+34)h = 13eh 00h (p+35)h = 13fh 02h (p+36)h = 140h 64h bank region 1 (erase block type 2) minimum block erase cycles 1000 (p+37)h = 141h 00h (p+38)h = 142h 01h bank regions 1 (erase block type 2): bits per cell, internal ecc bits 0-3: bits per cell in erase region bit 4: reserved for ?internal ecc used? bits 5-7: reserved (p+39)h = 143h 03h bank region 1 (erase block type 2): page mode and synchronous mode capabilities bit 0: page-mode reads permitted bit 1: synchronous reads permitted bit 2: synchronous writes permitted bits 3-7: reserved table 39. bank and erase block region 1 information (continued) m58lt128hst (top) M58LT128HSB (bottom) description offset data offset data
m58lt128hst, M58LT128HSB common flash interface 89/110 table 40. bank and erase block region 2 information m58lt128hst (top) M58LT128HSB (bottom) description offset data offset data (p+32)h = 13ch 01h (p+3a)h = 144h 0fh number of identical banks within bank region 2 (p+33)h = 13dh 00h (p+3b)h = 145h 00h (p+34)h = 13eh 11h (p+3c)h = 146h 11h number of program or erase operations allowed in bank region 2: bits 0-3: number of simultaneous program operations bits 4-7: number of simultaneous erase operations (p+35)h = 13fh 00h (p+3d)h = 147h 00h number of program or erase operations allowed in other banks while a bank in this region is programming bits 0-3: number of simultaneous program operations bits 4-7: number of simultaneous erase operations (p+36)h = 140h 00h (p+3e)h = 148h 00h number of program or erase operations allowed in other banks while a bank in this region is erasing bits 0-3: number of simultaneous program operations bits 4-7: number of simultaneous erase operations (p+37)h = 141h 02h (p+3f)h = 149h 01h types of erase block regions in bank region 2 n = number of erase block regions with contiguous same-size erase blocks. symmetrically blocked banks have one blocking region. (2) (p+38)h = 142h 06h (p+40)h = 14ah 07h bank region 2 erase block type 1 information bits 0-15: n+1 = number of identical-sized erase blocks bits 16-31: n256 = number of bytes in erase block region (p+39)h = 143h 00h (p+41)h = 14bh 00h (p+3a)h = 144h 00h (p+42)h = 14ch 00h (p+3b)h = 145h 02h (p+43)h = 14dh 02h (p+3c)h = 146h 64h (p+44)h = 14eh 64h bank region 2 (erase block type 1) minimum block erase cycles 1000 (p+3d)h = 147h 00h (p+45)h = 14fh 00h (p+3e)h = 148h 01h (p+46)h = 150h 01h bank region 2 (erase block type 1): bits per cell, internal ecc bits 0-3: bits per cell in erase region bit 4: reserved for ?internal ecc used? bits 5-7: reserved
common flash interface m58lt128hst, M58LT128HSB 90/110 1. the variable p is a pointer which is defined at cfi offset 015h. 2. bank regions. there ar e two bank regions, see table 29 and table 30 . (p+3f)h = 149h 03h (p+47)h = 151h 03h bank region 2 (erase block type 1):page mode and synchronous mode capabilities (defined in ta bl e 3 7 ) bit 0: page-mode reads permitted bit 1: synchronous reads permitted bit 2: synchronous writes permitted bits 3-7: reserved (p+40)h = 14ah 03h bank region 2 erase block type 2 information bits 0-15: n+1 = number of identical-sized erase blocks bits 16-31: n256 = number of bytes in erase block region (p+41)h = 14bh 00h (p+42)h = 14ch 80h (p+43)h = 14dh 00h (p+44)h = 14eh 64h bank region 2 (erase block type 2) minimum block erase cycles 1000 (p+45)h = 14fh 00h (p+46)h = 150h 01h bank region 2 (erase block type 2): bits per cell, internal ecc bits 0-3: bits per cell in erase region bit 4: reserved for ?internal ecc used? bits 5-7: reserved (p+47)h = 151h 03h bank region 2 (erase block type 2): page mode and synchronous mode capabilities (defined in ta bl e 3 7 ) bit 0: page-mode reads permitted bit 1: synchronous reads permitted bit 2: synchronous writes permitted bits 3-7: reserved (p+48)h = 152h (p+48)h = 1 52h feature space definitions (p+49)h = 153h (p+43)h = 153h reserved table 40. bank and erase block region 2 information (continued) m58lt128hst (top) M58LT128HSB (bottom) description offset data offset data
m58lt128hst, M58LT128HSB flowcharts and pseudo codes 91/110 appendix c flowcharts and pseudo codes figure 19. program flowchart and pseudo code 1. status check of sr1 (protected block), sr3 (v pp invalid) and sr4 (program erro r) can be made after each program operation or after a sequence. 2. if an error is found, the status register must be cl eared before further program/er ase controller operations. 3. any address within the bank can equally be used. write 40h or 10h (3) ai06170b start write address & data read status register (3) yes no sr7 = 1 yes no sr3 = 0 no sr4 = 0 v pp invalid error (1, 2) program error (1, 2) program_command (addresstoprogram, datatoprogram) {: writetoflash (addresstoprogram, 0x40); /*writetoflash (addresstoprogram, 0x10);*/ /*see note (3)*/ do { status_register=readflash (addresstoprogram); "see note (3)"; /* e or g must be toggled*/ } while (status_register.sr7== 0) ; if (status_register.sr3==1) /*v pp invalid error */ error_handler ( ) ; yes end yes no sr1 = 0 program to protected block error (1, 2) writetoflash (addresstoprogram, datatoprogram) ; /*memory enters read status state after the program command*/ if (status_register.sr4==1) /*program error */ error_handler ( ) ; if (status_register.sr1==1) /*program to protect block error */ error_handler ( ) ; }
flowcharts and pseudo codes m58lt128hst, M58LT128HSB 92/110 figure 20. blank check flowchart and pseudo code 1. any address within the bank can equally be used. 2. if an error is found, the status register must be cleared before further program/erase operations. write block address & bch start sr7 = 1 write block address & cbh read status register (1) sr4 = 1 sr5 = 1 sr5 = 0 no yes command sequence error (2) yes blank check error (2) no end blank_check_command (blocktocheck) { writetoflash (blocktocheck, 0xbc); writetoflash (blocktocheck, 0xcb); /* memory enters read status state after the blank check command */ do { status_register = readflash (blocktocheck); /* see note (1) */ /* e or g must be toggled */ } while (status_register.sr7==0); if (status_register.sr4==1) && (status_register.sr5==1) /* command sequence error */ error_handler () ; if (status_register.sr5==1) /* blank check error */ error_handler () ; } ai10520c
m58lt128hst, M58LT128HSB flowcharts and pseudo codes 93/110 figure 21. buffer program flowchart and pseudo code 1. n + 1 is the number of data being programmed. 2. next program data is an element belonging to buffer_progr am[].data; next program address is an element belonging to buffer_program[].address 3. routine for error check by reading sr3, sr4 and sr1. buffer program e8h command, start address ai08913b start write buffer data, start address yes x = n end no write n (1) , start address x = 0 write next buffer data, next program address x = x + 1 program buffer to flash confirm d0h read status register no sr7 = 1 yes full status register check (3) (2) read status register no sr7 = 1 yes buffer_program_command (start_address, n, buffer_program[] ) /* buffer_program [] is an array structure used to store the address and data to be programmed to the flash memory (the address must be within the segment start address and start address+n) */ { do {writetoflash ( start _address, 0xe8) ; status_register=readflash ( start _address); } while (status_register.sr7==0); writetoflash ( start _address, n); writetoflash (buffer_program[0].address, buffer_program[0].data); /*buffer_program[0].address is the start address*/ x = 0; while (x flowcharts and pseudo codes m58lt128hst, M58LT128HSB 94/110 figure 22. program suspend & resume flowchart and pseudo code 1. the read status register command (write 70h) can be issu ed just before or just after the program resume command. write 70h ai10117b read status register yes no sr7 = 1 yes no sr2 = 1 write d0h read data from another address start write b0h program complete write ffh program_suspend_command ( ) { writetoflash (any_address, 0xb0) ; writetoflash (bank_address, 0x70) ; /* read status register to check if program has already completed */ do { status_register=readflash (bank_address) ; /* e or g must be toggled*/ } while (status_register.sr7== 0) ; if (status_register.sr2==0) /*program completed */ { writetoflash (bank_address, 0xff) ; read_data ( ) ; /*the device returns to read array (as if program/erase suspend was not issued).*/ } else { writetoflash (bank_address, 0xff) ; read_data ( ); /*read data from another address*/ writetoflash (any_address, 0xd0) ; /*write 0xd0 to resume program*/ writetoflash (bank_address, 0x70) ; /*read status register to check if program has completed */ } } write ffh program continues with bank in read status register mode read data write 70h (1)
m58lt128hst, M58LT128HSB flowcharts and pseudo codes 95/110 figure 23. block erase flowchart and pseudo code 1. if an error is found, the status register must be cleared before further program/erase operations. 2. any address within the bank can equally be used. write 20h (2) ai10976 start write block address & d0h read status register (2) yes no sr7 = 1 yes no sr3 = 0 yes sr4, sr5 = 1 v pp invalid error (1) command sequence error (1) no no sr5 = 0 erase error (1) end yes no sr1 = 0 erase to protected block error (1) yes erase_command ( blocktoerase ) { writetoflash (blocktoerase, 0x20) ; /*see note (2) */ writetoflash (blocktoerase, 0xd0) ; /* memory enters read status state after the erase command */ } while (status_register.sr7== 0) ; do { status_register=readflash (blocktoerase) ; /* see note (2) */ /* e or g must be toggled*/ if (status_register.sr3==1) /*v pp invalid error */ error_handler ( ) ; if ( (status_register.sr4==1) && (status_register.sr5==1) ) /* command sequence error */ error_handler ( ) ; if (status_register.sr1==1) /*program to protect block error */ error_handler ( ) ; if ( (status_register.sr5==1) ) /* erase error */ error_handler ( ) ; }
flowcharts and pseudo codes m58lt128hst, M58LT128HSB 96/110 figure 24. erase suspend & resume flowchart and pseudo code 1. the read status register command (write 70h) can be is sued just before or just after the erase resume command. write 70h ai13893 read status register yes no sr7 = 1 yes no sr6 = 1 erase continues write d0h read data from another block, program, set configuration register or block protect/unprotect/lock start write b0h erase complete write ffh read data write ffh erase_suspend_command ( ) { writetoflash (bank_address, 0xb0) ; writetoflash (bank_address, 0x70) ; /* read status register to check if erase has already completed */ do { status_register=readflash (bank_address) ; /* e or g must be toggled*/ } while (status_register.sr7== 0) ; if (status_register.sr6==0) /*erase completed */ { writetoflash (bank_address, 0xff) ; read_data ( ) ; /*read data from another block*/ /*the device returns to read array (as if program/erase suspend was not issued).*/ } else { writetoflash (bank_address, 0xff) ; read_program_data ( ); /*read or program data from another address*/ writetoflash (bank_address, 0xd0) ; /*write 0xd0 to resume erase*/ } }
m58lt128hst, M58LT128HSB flowcharts and pseudo codes 97/110 figure 25. protect/unprotect operation flowchart and pseudo code 1. any address within the bank can equally be used. write 01h, d0h ai12895 read block protect state yes no protection change confirmed? start write 60h (1) protect_operation_command (address, protect_operation) { writetoflash (address, 0x60) ; /*configuration setup*/ /* see note (1) */ if (readflash (address) ! = protection_state_expected) error_handler () ; /*check the protection state (see read block signature table )*/ writetoflash (address, 0xff) ; /*reset to read array mode*/ /*see note (1) */ } write ffh (1) write 90h (1) end if (protect_operation==protect) /*to protect the block*/ writetoflash (address, 0x01) ; else if (protect_operation==unprotect) /*to unprotect the block*/ writetoflash (address, 0xd0) ; writetoflash (address, 0x90) ; /*see note (1) */
flowcharts and pseudo codes m58lt128hst, M58LT128HSB 98/110 figure 26. protection register program flowchart and pseudo code 1. status check of sr1 (protected block), sr3 (v pp invalid) and sr4 (program erro r) can be made after each program operation or after a sequence. 2. if an error is found, the status register must be cl eared before further program/er ase controller operations. 3. any address within the bank can equally be used. write c0h (3) ai06177b start write address & data read status register (3) yes no sr7 = 1 yes no sr3 = 0 no sr4 = 0 v pp invalid error (1, 2) program error (1, 2) protection_register_program_command (addresstoprogram, datatoprogram) {: writetoflash (addresstoprogram, 0xc0) ; /*see note (3) */ do { status_register=readflash (addresstoprogram) ; /* see note (3) */ /* e or g must be toggled*/ } while (status_register.sr7== 0) ; if (status_register.sr3==1) /*vpp invalid error */ error_handler ( ) ; yes end yes no sr1 = 0 program to protected block error (1, 2) writetoflash (addresstoprogram, datatoprogram) ; /*memory enters read status state after the program command*/ if (status_register.sr4==1) /*program error */ error_handler ( ) ; if (status_register.sr1==1) /*program to protect block error */ error_handler ( ) ; }
m58lt128hst, M58LT128HSB flowcharts and pseudo codes 99/110 figure 27. buffer enhanced factory program flowchart and pseudo code write 80h to address wa1 ai12898 start write d0h to address wa1 write ffffh to address = not wa1 read status register sr7 = 0 no no sr0 = 0 yes read status register sr3 and sr1for errors exit write pdx address wa1 increment count x = x + 1 initialize count x = 0 x = 32 yes read status register last data? yes read status register sr7 = 1 yes full status register check end yes sr4 = 1 no no no no setup phase program and verify phase exit phase buffer_enhanced_factory_program_command (start_address, dataflow[]) { writetoflash (start_address, 0x80) ; writetoflash (start_address, 0xd0) ; do { do { status_register = readflash (start_address); if (status_register.sr4==1) { /*error*/ if (status_register.sr3==1) error_handler ( ) ;/*v pp error */ if (status_register.sr1==1) error_handler ( ) ;/* protected block */ } while (status_register.sr7==1) x=0; /* initialize count */ do { writetoflash (start_address, dataflow[x]); x++; }while (x<32) do { status_register = readflash (start_address); }while (status_register.sr0==1) } while (not last data) writetoflash (another_block_address, ffffh) do { status_register = readflash (start_address) }while (status_register.sr7==0) full_status_register_check(); }
command interface state tables m58lt128hst, M58LT128HSB 100/110 appendix d command interface state tables table 41. command interface states - modify table, next state (1) current ci state command input read array (2) (ffh) program setup (3)(4) (10/40h) buffer program (3)(4) (e8h) block erase, setup (3)(4) (20h) befp setup (80h) blank check setup (bch) erase confirm p/e resume, block unprotect confirm, befp confirm (3)(4) (d0h) blank check confirm (cbh) buffer program, program/ erase suspend (b0h) read status register (70h) clear status register (5) (50h) read electronic signature , read cfi query (90h, 98h) ready ready program setup bp setup erase setup befp setup blank check setup ready protect/cr setup ready (protect error) ready (unprotect block) ready (protect error) otp setup otp busy busy otp busy is in otp busy otp busy is in otp busy otp busy is in otp busy otp busy program setup program busy busy program busy is in program busy program busy is in program busy program busy program suspend program busy is in program busy program busy suspend ps is in ps ps is in program suspend ps program busy program suspend is in ps program suspend buffer program setup buffer program load 1 (give word count load (n-1)); buffer load 1 if n=0 go to buffer program confirm. else (n 0) go to buffer program load 2 (data load) buffer load 2 buffer program confirm when count =0; else buffer program load 2 (note: buffer program will fail at this point if any block address is different from the first address) confirm ready (error) bp busy ready (error) busy bp busy is in bp busy bp busy is in bp busy bp busy bp suspend buffer program busy is in bp busy buffer program busy suspend bp suspend is in bp suspend bp suspend is in bp suspend bp suspend bp busy buffer program suspend is in bp suspend buffer program suspend
m58lt128hst, M58LT128HSB command interface state tables 101/110 erase setup ready (error) erase busy ready (error) busy erase busy is in erase busy erase busy is in erase busy erase busy erase suspend erase busy is in erase busy erase busy suspend erase suspend program in es bp in es is in erase suspend es erase busy erase suspend is in es erase suspend program in erase suspend setup program busy in erase suspend busy program busy in es is in program busy in es program busy in es is in program busy in es program busy in es ps in es program busy in erase suspend is in program busy in es program busy in erase suspend suspend ps in es is in ps in es ps in es is in program suspend in es ps in es program busy in es program suspend in erase suspend is in ps in es program suspend in erase suspend buffer program in erase suspend setup buffer program load 1 in erase suspend (give word count load (n-1)); if n=0 go to buffer program confirm. else (n 0) go to buffer program load 2 buffer load 1 buffer program load 2 in erase suspend (data load) buffer load 2 buffer program confirm in erase suspend when count =0; else buffer program load 2 in erase suspend (note: buffer program will fail at this point if any block address is different from the first address) confirm erase suspend (sequence error) bp busy in es erase suspend (sequence error) busy bp busy in es is in bp busy in es bp busy in es is in bp busy in es bp busy in es bp suspend in es buffer program busy in es is in bp busy in es buffer program busy in erase suspend suspend bp suspend in es is in bp suspend in es bp suspend in es is in bp suspend in erase suspend bp suspend in es bp busy in erase suspend buffer program suspend in erase suspend is in bp suspend in es bp suspend in erase suspend table 41. command interface states - modify table, next state (1) (continued) current ci state command input read array (2) (ffh) program setup (3)(4) (10/40h) buffer program (3)(4) (e8h) block erase, setup (3)(4) (20h) befp setup (80h) blank check setup (bch) erase confirm p/e resume, block unprotect confirm, befp confirm (3)(4) (d0h) blank check confirm (cbh) buffer program, program/ erase suspend (b0h) read status register (70h) clear status register (5) (50h) read electronic signature , read cfi query (90h, 98h)
command interface state tables m58lt128hst, M58LT128HSB 102/110 blank check setup ready (error) blank check busy ready (error) busy blank check busy is in blank check busy blank check busy is in blank check busy blank check busy protect/cr setup in erase suspend erase suspend (protect error) erase suspend erase suspend (protect error) buffer efp setup ready (error) befp busy ready (error) busy befp busy (6) 1. ci = command interface, cr = configuration register, bef p = buffer enhanced factory program, p/e c = program/erase controller, is = illegal state, bp = buffer program, es = erase suspend. 2. at power-up, all banks are in read array mode. issuing a read array command to a busy bank, results in undetermined data output. 3. the two cycle command should be issued to the same bank address. 4. if the p/e c is active, both cycles are ignored. 5. the clear status register command clears the sr erro r bits except when the p/e c. is busy or suspended. 6. befp is allowed only when status register bi t sr0 is reset to '0'. befp is busy if block address is first befp address. any other commands are treated as data. table 41. command interface states - modify table, next state (1) (continued) current ci state command input read array (2) (ffh) program setup (3)(4) (10/40h) buffer program (3)(4) (e8h) block erase, setup (3)(4) (20h) befp setup (80h) blank check setup (bch) erase confirm p/e resume, block unprotect confirm, befp confirm (3)(4) (d0h) blank check confirm (cbh) buffer program, program/ erase suspend (b0h) read status register (70h) clear status register (5) (50h) read electronic signature , read cfi query (90h, 98h)
m58lt128hst, M58LT128HSB command interface state tables 103/110 table 42. command interface states - modify table, next output state (1) (2) current ci state command input read array (3) (ffh) program setup (4) (5) (10/40h) buffer program (e8h) block erase, setup (4) (5) (20h) befp setup (80h) blank check setup (bch) erase confirm p/e resume, block unprotect confirm, befp confirm (4)(5) (d0h) blank check confirm (cbh) program/ erase suspend (b0h) read status register (70h) clear status register (50h) read electronic signature, read cfi query (90h, 98h) program setup status register erase setup otp setup program setup in erase suspend befp setup befp busy buffer program setup buffer program load 1 buffer program load 2 buffer program confirm buffer program setup in erase suspend buffer program load 1 in erase suspend buffer program load 2 in erase suspend buffer program confirm in erase suspend blank check setup protect/cr setup protect/cr setup in erase suspend
command interface state tables m58lt128hst, M58LT128HSB 104/110 otp busy array status register output unchanged status register output unchang ed status register ready electronic signature/ cfi program busy erase busy buffer program busy program/erase suspend buffer program suspend program busy in erase suspend buffer program busy in erase suspend program suspend in erase suspend buffer program suspend in erase suspend blank check busy illegal state output unchanged 1. the output state shows the type of data that appears at the outputs if the bank address is the same as the command address. a bank can be placed in read array, read status register, read electronic signature or read cfi mode, depending on the command issued. each bank remains in its last output state until a new command is issued to that bank. the next state does not depend on the bank output state. 2. ci = command interface, cr = configuration register , befp = buffer enhanced factory program, p/e. c. = program/erase controller. 3. at power-up, all banks are in read array mode. issuing a read array command to a busy bank, results in undetermined data output. 4. the two cycle command should be issued to the same bank address. 5. if the p/e.c. is active , both cycles are ignored. table 42. command interface states - modify table, next output state (1) (2) (continued) current ci state command input read array (3) (ffh) program setup (4) (5) (10/40h) buffer program (e8h) block erase, setup (4) (5) (20h) befp setup (80h) blank check setup (bch) erase confirm p/e resume, block unprotect confirm, befp confirm (4)(5) (d0h) blank check confirm (cbh) program/ erase suspend (b0h) read status register (70h) clear status register (50h) read electronic signature, read cfi query (90h, 98h)
m58lt128hst, M58LT128HSB command interface state tables 105/110 table 43. command interface states - lock table, next state (1) current ci state command input protect/cr setup (2) (60h) otp setup (2) (c0h) block protect confirm (01h) set cr confirm (03h) block address (wa0) (3) (xxxxh) illegal command (4) p/e c operation completed (5) ready protect/cr setup otp setup ready n/a protect/cr setup ready (protect error) ready ready (protect error) n/a otp setup otp busy n/a busy is in otp busy otp busy ready is in otp busy otp busy is ready program setup program busy n/a busy is in program busy program busy ready is in program busy program busy is ready suspend is in ps program suspend n/a is in ps program suspend buffer program setup buffer program load 1 (give word count load (n-1)); n/a buffer load 1 buffer program load 2 (6) exit see note (6) n/a buffer load 2 buffer program confirm when count =0; else buffer program load 2 (note: buffer program will fail at this point if any block address is different from the first address) n/a confirm ready (error) n/a busy is in bp busy buffer program busy ready is in buffer program busy buffer program busy is ready suspend is in bp suspend buffer program suspend n/a is in bp suspend buffer program suspend erase setup ready (error) n/a busy is in erase busy erase busy ready is in erase busy erase busy is ready suspend protect/cr setup in es is in es erase suspend n/a is in es erase suspend
command interface state tables m58lt128hst, M58LT128HSB 106/110 program in erase suspend setup program busy in erase suspend n/a busy is in program busy in es program busy in erase suspend es is in program busy in es program busy in erase suspend is in es suspend is in ps in es program suspend in erase suspend n/a is in ps in es program suspend in erase suspend buffer program in erase suspend setup buffer program load 1 in erase suspend (give word count load (n-1)) n/a buffer load 1 buffer program load 2 in erase suspend (7) exit see note (7) buffer load 2 buffer program confirm in erase suspend when count =0; else buffer program load 2 in erase suspend (note: buffer program will fail at this point if any block address is different from the first address) confirm erase suspend (sequence error) busy is in bp busy in es buffer program busy in erase suspend es is in bp busy in es bp busy in es is in es suspend is in bp suspend in es buffer program suspend in erase suspend n/a is in bp suspend in es buffer program suspend in erase suspend blank check setup ready (error) n/a blank check busy is in blank check busy blank check busy ready protect/cr setup in es erase suspend (protect error) erase suspend erase suspend (protect error) n/a befp setup ready (error) n/a busy befp busy (8) exit befp busy (8) n/a 1. ci = command interface, cr = configuration register, befp = buffer enhanced factory pr ogram, p/e c = program/erase controller, is = illegal state, bp = buffer program, es = erase suspend, wa0 = address in a bl ock different from first befp address. 2. if the p/e c is active, both cycle are ignored. 3. befp exit when block address is different from first block address and data are ffffh. 4. illegal commands are those not defined in the command set. 5. n/a: not available. in this case the state remains unchanged. 6. if n=0 go to buffer program confirm. else (not =0) go to buffer program load 2 (data load) 7. if n=0 go to buffer program confirm in erase suspend. else (not =0) go to buffer program load 2 in erase suspend. 8. befp is allowed only when status register bit sr0 is set to '0'. befp is busy if block addr ess is first befp address. any other commands are treated as data. table 43. command interface states - lock table, next state (1) (continued) current ci state command input protect/cr setup (2) (60h) otp setup (2) (c0h) block protect confirm (01h) set cr confirm (03h) block address (wa0) (3) (xxxxh) illegal command (4) p/e c operation completed (5)
m58lt128hst, M58LT128HSB command interface state tables 107/110 table 44. command interface states - lock table, next output state (1) (2) current ci state command input protect/cr setup (3) (60h) blank check setup (bch) otp setup (3) (c0h) blank check confirm (cbh) block protect confirm (01h) set cr confirm (03h) befp exit (4) (ffffh) illegal command (5) p. e./c. operation completed program setup status register output unchanged erase setup otp setup program setup in erase suspend befp setup befp busy buffer program setup buffer program load 1 buffer program load 2 buffer program confirm buffer program setup in erase suspend buffer program load 1 in erase suspend buffer program load 2 in erase suspend buffer program confirm in erase suspend blank check setup protect/cr setup status register array status register protect/cr setup in erase suspend
command interface state tables m58lt128hst, M58LT128HSB 108/110 otp busy status register output unchanged array output unchanged ready program busy erase busy buffer program busy program/erase suspend buffer program suspend program busy in erase suspend buffer program busy in erase suspend program suspend in erase suspend buffer program suspend in erase suspend blank check busy illegal state output unchanged 1. the output state shows the type of data that appears at the outputs if the bank address is the same as the command address. a bank can be placed in read array, read status register, read electronic signature or read cfi mode, depending on the command issued. each bank remains in its last output state until a new command is issued to that bank. the next state does not depend on the bank's output state. 2. ci = command interface, cr = configuration register , befp = buffer enhanced factory program, p/e. c. = program/erase controller. 3. if the p/e.c. is active , both cycles are ignored. 4. befp exit when block address is different from first block address and data are ffffh. 5. illegal commands are those not defined in the command set. table 44. command interface states - lock table, next output state (continued) (1) (2) current ci state command input protect/cr setup (3) (60h) blank check setup (bch) otp setup (3) (c0h) blank check confirm (cbh) block protect confirm (01h) set cr confirm (03h) befp exit (4) (ffffh) illegal command (5) p. e./c. operation completed
m58lt128hst, M58LT128HSB revision history 109/110 revision history table 45. document revision history date revision changes 02-mar-2007 1 initial release.
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